Coevaporated Formamidinium Tin Triiodide with Suppressed p‑Type Self-Doping. [PDF]
Park J +4 more
europepmc +1 more source
AI‐Optimized Vanadium Oxide Multilayers for More Than 20‐fold Enhancement in Bolometric Performance
Machine‐learning‐optimized WxV1‐xOy multilayer thin films with graded doping achieve a high TCR (7.3 % K−1), reduced hysteresis, and low noise under CMOS‐compatible growth conditions. This approach overcomes the long‐standing trade‐off in microbolometers between linear response and performance, offering a universal bolometric parameter greatly enhanced
Jin‐Hyun Choi +8 more
wiley +1 more source
Enhancing CaV<sub>0.5</sub>Fe<sub>0.5</sub>O<sub>3</sub>-Based Lead-Free Perovskite Solar Cell Efficiency by over 23% via Transport Layer Engineering. [PDF]
Moiz SA, Masud MI.
europepmc +1 more source
The Role of Ionic Liquids at the Biological Interfaces in Bioelectronics
Ionic liquids (ILs) are highlighted as key artificial ionic materials that bridge biological ion‐based signaling and electronic devices. By understanding their composition, structure, function relationships, and mechanisms, ILs can advance from high performance electrolyte to core materials enabling integrated, multifunctional bioelectronics for ...
Yeong‐sinn Ye +5 more
wiley +1 more source
Electronic and optical properties of lead-free K₂AgSbBr₆ double perovskite tuned by doping elements Cu⁺, Bi³⁺, and I⁻. [PDF]
Benlakhdar F +7 more
europepmc +1 more source
This study presents a novel “in vivo–in vitro” therapeutic strategy for spinal cord injury by leveraging magnetically responsive piezoelectric nanomaterials. These nanomaterials enable targeted delivery of localized electrical stimulation at the injury site through noninvasive external magnetic actuation, thereby promoting axonal regeneration and ...
Zhihang Xiao +9 more
wiley +1 more source
Perovskite Nanocrystals, Quantum Dots, and Two-Dimensional Structures: Synthesis, Optoelectronics, Quantum Technologies, and Biomedical Imaging. [PDF]
Ullah K +5 more
europepmc +1 more source
Imperfection in Semiconductors Leading to High Performance Devices
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz +8 more
wiley +1 more source

