Results 181 to 190 of about 8,409,785 (376)

Learning Curve in Robotic Colorectal Surgery. [PDF]

open access: yesJSLS
Bhattacharya A, Bhattacharyya S, Das P.
europepmc   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li   +7 more
wiley   +1 more source

Learning curve: Endobronchial ultrasound-guided needle aspiration

open access: yesLung India, 2019
Nishtha Singh   +2 more
doaj   +1 more source

Assessing the Learning Curve in Conduction System Pacing Implantation. [PDF]

open access: yesJ Clin Med
Santoro A   +9 more
europepmc   +1 more source

What Is the Expected Learning Curve in Computer-assisted Navigation for Bone Tumor Resection? [PDF]

open access: bronze, 2016
Germán L. Farfalli   +5 more
openalex   +1 more source

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam   +14 more
wiley   +1 more source

The learning curve: Implications of a quantitative analysis

open access: green, 2004
C. R. Gallistel   +2 more
openalex   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy