Results 191 to 200 of about 42,280 (306)

Bias‐Triggered Conductivity Relaxation (BCR): A Unique Tool to Simultaneously Investigate Thermodynamics, Kinetics, and Electrostatic Effects of Oxygen Reactions in MIEC Thin Films

open access: yesAdvanced Materials, EarlyView.
This work develops bias‐triggered conductivity relaxation as a novel technique to study oxygen reactions in mixed ionic‐electronic conducting thin films by integrating electrochemical titration and electrical conductivity relaxation to achieve synchronous multi‐parameter characterization, providing simultaneous electronic, ionic, and extraordinarily ...
Alexander Stangl   +4 more
wiley   +1 more source

Bias‐Field Free Single‐Frequency CW‐ODMR of Nitrogen‐Vacancy Centers in Diamond for the Detection of Transient Electrical Signals

open access: yesAdvanced Materials Interfaces, EarlyView.
Simplified quantum sensing technique for the detection of short electrical signals occurring in neuronal signaling or bioinspired technologies. We demonstrate a single frequency continuous‐wave optically detected magnetic resonance (CW‐ODMR) approach to sense signals that can be as short as 0.2 ms.
João Paulo Silva   +4 more
wiley   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

open access: yesAdvanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Biodegradable Chitosan Films as Green Resists for Gold Nanowires Fabrication Through AFM‐Based Nanolithography

open access: yesAdvanced Materials Interfaces, EarlyView.
Schematic illustration of a sustainable nanofabrication process: chitosan derived from natural sources is used as a biodegradable thin film resist, patterned via Constant Pulse‐Assisted Force Lithography (CP‐AFL) to create tunable nanogrooves. These grooves template gold nanowire formation, enabling high‐resolution nanopatterning under ambient ...
Paolo Pellegrino   +7 more
wiley   +1 more source

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

open access: yesAdvanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho   +3 more
wiley   +1 more source

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