Results 201 to 210 of about 201,272 (330)

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

open access: yesAdvanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho   +9 more
wiley   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Directional Flow of Confined Polaritons in CrSBr

open access: yesAdvanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak   +10 more
wiley   +1 more source

High Efficiency Nonpolar and Semipolar Light Emitting Diodes - Invited [PDF]

open access: bronze, 2009
Steven P. DenBaars   +6 more
openalex   +1 more source

Non‐Destructive Laser Nanopatterning of Superconducting Heterostructures in Topological Sn Thin Films

open access: yesAdvanced Materials, EarlyView.
We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh   +5 more
wiley   +1 more source

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