Results 81 to 90 of about 3,559,659 (295)

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

AIP Advances, 2016
n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition.
Ling Li, Yuantao Zhang, Long Yan, Junyan Jiang, Xu Han, Gaoqiang Deng, Chen Chi, Junfeng Song   +7 more
doaj   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Resonant energy transfer in light harvesting and light emitting applications

, 2009
The performance of light emitting and light harvesting devices is improved by utilising resonant energy transfer. In lighting applications, the emission energy of a semiconductor heterostructure and the absorption of organic dyes or colloidal quantum ...
Chanyawadee, Soontorn
core   +1 more source

Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing

Advanced Functional Materials, EarlyView.
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon, Je‐Jun Lee, Somin Yun, Sangin Hahn, Chanhyeok Kim, Jinsoo Park, Jung Pyo Hong, Seong‐Jun Han, Jung Woo Kim, Jeong Hwan Lee, Subin Jeon, Youngmin Kim, Gunuk Wang, Hanul Min, Do Kyung Hwang   +14 more
wiley   +1 more source

Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes

Nanophotonics, 2018
In this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a ...
Li Ning, Lau Ying Suet, Miao Yanqin, Zhu Furong   +3 more
doaj   +1 more source

Blue Upconversion Organic Light‐Emitting Diodes Achieving 1000 cd m−2 With an Operating Voltage of 2.7 V by Suppressing Interfacial Exciton Quenching

Advanced Functional Materials, EarlyView.
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui, Hiroto Iwasaki, Kosuke Anraku, Ken Albrecht, Yutaka Majima, Seiichiro Izawa   +5 more
wiley   +1 more source

Deciphering the Photopolymerization‐Induced Nanostructures and Interface Formation for Submicrometer Additive Manufacturing

Advanced Functional Materials, EarlyView.
This work reveals the UV‐curing‐induced monomer‐rich domain, oligomer‐rich domain, and entangled oligomer domain. The cured submicron films in stressed state induce interlayer nano‐wrinkle structures during the deposition of the second layer. Stress‐free cured films in relaxed state form non‐diffusive, diffusive and semi‐diffusive interlayer ...
Shouzheng Chen, Yufeng Zhai, Jungui Zhou, Lixing Li, Simon Schraad, Guangjiu Pan, Xuehe Jiang, Sarathlal Koyiloth Vayalil, Rolf A. T. M. van Benthem, Julien R. G. Navarro, Johan F. G. A. Jansen, Mats K. G. Johansson, Peter Müller‐Buschbaum, Stephan V. Roth   +13 more
wiley   +1 more source

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

, 2010
To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition.
Yang H, Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn, Zhu JH, Zhao DG, Wang YT, Wang LJ, Zhu JJ, Zhang SM, Liu ZS, Jiang DS   +9 more
core   +1 more source

Evaluating the viability of integrating single-unit perovskite light-emitting diodes into perovskite–perovskite tandem configurations

Nano Research
As an inherent current-driven device, the luminous intensity of a single-unit perovskite light-emitting diode is directly proportional to the current density.
Eng Liang Lim, Xi Chen, Zhanhua Wei
doaj   +1 more source

Blue light emitting diode internal and injection efficiency

AIP Advances, 2012
A simple experimental method of light emitting diode (LED) injection efficiency (IE) determination was suggested. IE and internal quantum efficiency (IQE) calculation is an actual and difficult problem in LED science.
Ilya E. Titkov, Denis A. Sannikov, Young-Min Park, Joong-Kon Son   +3 more
doaj   +1 more source