Results 71 to 80 of about 157,666 (280)
Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods +15 more
wiley +1 more source
Temperature compensation of light-emitting diodes [PDF]
Circuit which includes a thermistor-resistor combination to compensate for temperature fluctuations by supplying input voltage to light-emitting diode, maintains constant light output.
Burrous, C. N., Deboo, G. J.
core +1 more source
2D materials and van der Waals heterostructures
The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g.
Carvalho, A. +3 more
core +1 more source
Active-matrix GaN micro light-emitting diode display with unprecedented brightness [PDF]
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device ...
Dawson, Martin D. +12 more
core +1 more source
The Effect of Purcell Cavities on the Lifetime of Thermally Activated Delayed Fluorescent Emitters
A pressing challenge to OLED displays and lighting is to balance high efficiency and long operational lifetime in the deep blue spectrum. The Purcell effect can reduce the triplet density and hence the probability for destructive energy‐driven triplet annihilation events that limit the OLED lifetime. Here we study of the Purcell effect on two different
Sritoma Paul +4 more
wiley +1 more source
A narrow-band speckle-free light source via random Raman lasing
Currently, no light source exists which is both narrow-band and speckle-free with sufficient brightness for full-field imaging applications. Light emitting diodes (LEDs) are excellent spatially incoherent sources, but are tens of nanometers broad. Lasers
Bixler, Joel N. +10 more
core +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
Efficient and stable near-infrared InAs quantum dot light-emitting diodes
Visible quantum dot light-emitting diodes have satisfied commercial display requirements. However, near-infrared counterparts considerably lag behind due to the inferior quality of near-infrared quantum dots and limitations in device architecture ...
Binghan Li +10 more
doaj +1 more source
InGaN nano-ring structures for high-efficiency light emitting diodes [PDF]
A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated.
Choi, H. W. +8 more
core +1 more source
Fibrous benzenetrispeptide (BTP) hydrogels, fabricated via strain‐promoted azide‐alkyne cycloaddition (SPAAC) crosslinking, form robust, bioinert networks. These hydrogels can support 3D cell culture, where cell viability and colony growth depend on the fiber content.
Ceren C. Pihlamagi +5 more
wiley +1 more source

