Results 141 to 150 of about 60,145 (311)

Near‐Unity Chiral Lasing Enabled by Quasi‐Bound States in the Continuum

Advanced Materials, EarlyView.
Nanoimprinted chiral array that supports bound states in the continuum is doped with an efficient non‐chiral molecule (Rhodamine‐B) acting as gain medium to produce fully circularly polarized lasing emission. The chiral lasing wavelength can be tuned across the emission band of Rhodamine‐B by adjusting the coating thickness of the TiO2 high refractive ...
Jose Mendoza‐Carreño, Luis A. Pérez, Carlota Ruiz De Galarreta, Théo Rouanet, M. Isabel Alonso, Agustín Mihi   +5 more
wiley   +1 more source

Bias‐Field Free Single‐Frequency CW‐ODMR of Nitrogen‐Vacancy Centers in Diamond for the Detection of Transient Electrical Signals

Advanced Materials Interfaces, EarlyView.
Simplified quantum sensing technique for the detection of short electrical signals occurring in neuronal signaling or bioinspired technologies. We demonstrate a single frequency continuous‐wave optically detected magnetic resonance (CW‐ODMR) approach to sense signals that can be as short as 0.2 ms.
João Paulo Silva, Orlando D. Cunha, Pedro Magalhães, Filipe Camarneiro, Jana B. Nieder   +4 more
wiley   +1 more source

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

Advanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan, Mitchell Kaiser, Maria L. Sushko, Xiaobin Liao, Hao Tang, Chun‐Chih Tseng, Matthew Yankowitz, Ying Xia, Jihui Yang, Jun Liu   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

light-emitting diode

, 2014
Citation: 'light-emitting diode' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.LT07414 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire   +1 more source

Magnetic‐Field Modulation of Charge Transport in Non‐Fullerene Semiconductors for Enhanced Hydrogen Evolution

Advanced Materials Interfaces, EarlyView.
ABSTRACT This study demonstrates that weak magnetic fields (16–40 mT) increase the efficiency of the hydrogen evolution reaction (HER) in electrocatalysts based on non‐fullerene acceptor (NFA) derivatives IT‐4Cl and Y6. Electrochemical measurements reveal that the application of the magnetic field reduces the onset potential and increases the current ...
João Paulo Araujo Souza, Marlus Koehler, John Fredy Ricardo Marroquin, Jorlandio Francisco Felix, Thanh‐Tuân Bui, Paulo Eduardo Narcizo de Souza, Sebastião William da Silva, Luana Wouk   +7 more
wiley   +1 more source

The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection

, 2008
A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), has been fabricated and characterized.
Zeng YP, Cao, JS, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: guanmin@semi.ac.cn, qindashan@yahoo.com.cn, Cao JS, Li JM, Qin DS, ypzeng@red.semi.ac.cn, Guan M, Cao GH   +8 more
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Spectroscopic ellipsometry on thin films of conjugated polymers [PDF]

, 2001
This work presents results from spectroscopic ellipsometry measurements of thin films of conjugated polymers constructed by spin casting with rapid solvent evaporation.
Tammer, Michael
core  

Interfacial Electronic Restructuring in MAPbBr3/rGO Hybrids Enabling Improved Charge Extraction for Efficient Photodetection

Advanced Materials Interfaces, EarlyView.
MAPbBr3/rGO hybrids exhibit interfacial electronic restructuring that enhances charge extraction in photodetectors. The incorporation of rGO modifies the surface chemical environment, enhances electron‐dominated transport, and suppresses performance degradation, resulting in higher responsivity, detectivity, and photostability than in pristine MAPbBr3 ...
Mohammed Misbah Uddin, Wisnu Tantyo Hadmojo, Zeyad M. Abdulhamid, Marwa Abd‐Ellah, Ahmed L. Abdelhady   +4 more
wiley   +1 more source

Fabrication and Simulation of Ultraviolet AlGaInN Light-emitting Diodes

, 2012
[[abstract]]The ultraviolet AlGaInN light-emitting diode under study is grown on a c-face sapphire substrate by low-pressure horizontal-flow metalorganic chemical vapor deposition (MOCVD). With increasing input current from 10 to 100 mA, the main peak of
Yen, Sheng-Horng; Chen, Bo-Jean; Chen, Mei-Ling; Kuo, Yen-Kuang; Chang, Yi-An; Kuo, Hao-Chung
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