Results 171 to 180 of about 60,145 (311)

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

open access: yesAdvanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi   +7 more
wiley   +1 more source

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

open access: yes, 2011
Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology.
Dong, Z (reprint author), Chinese Acad Sci, State Key Lab Integrated Optoelect Inst Semicond, Beijing 100083, Peoples R China. dongzan@semi.ac.cn   +6 more
core  

Understanding Interfacial Photoswitching Mechanisms in Atomically‐Thin TMD‐Spiropyran Hybrids

open access: yesAdvanced Materials Technologies, EarlyView.
Photochromic molecules can effectively modulate the optoelectronic properties of atomically thin transition metal dichalcogenide semiconductors. Spiropyran that switches its chemical configuration upon alternating UV and visible irradiation enables light‐programmable optoelectronic devices.
Sewon Park   +8 more
wiley   +1 more source

Exploring the Synergy of Combining BINAP and tCzBN Motifs Within Multi‐Resonant TADF Emitters to Enhance OLED Performance

open access: yesAdvanced Optical Materials, EarlyView.
This work presents two MR‐TADF emitters, BINAP‐BN1 and BINAP‐BN2, based on a BINAP core and differing numbers of tCzBN units. Both emitters show similar solution photophysics, but distinct behavior in doped films, where BINAP‐BN1 exhibits higher photoluminescence quantum yield and suppressed aggregation‐induced emission broadening compared to BINAP‐BN2.
John Marques dos Santos   +8 more
wiley   +1 more source

Aerosol Jet Printed Polymer‐Free High Aspect Ratio Quantum Dot Films for Enhanced Color Conversion

open access: yesAdvanced Optical Materials, EarlyView.
Polymer‐free quantum dot color conversion layers are aerosol jet printed at high aspect ratio by tuning the aerosol focus ratio to induce in‐flight droplet drying. Contact‐line pinning suppresses lateral spreading, enabling ∼10 µm‐thick films at ∼50 µm widths with blue light leakage below 0.25% and conversion efficiency approaching 18%, demonstrated ...
Sukyung Choi   +5 more
wiley   +1 more source

Mitigating Efficiency Roll‐Off in Phosphor‐Sensitized Fluorescence OLEDs via Molecular Polarity‐Based Benzofuropyridine Host Engineering

open access: yesAdvanced Optical Materials, EarlyView.
Positional isomerism in dibenzofuran‐based n‐type hosts modulates molecular polarity, charge‐transport balance, and emissive‐layer packing. The higher‐polarity BFPDB‐2 host facilitates efficient energy funneling, reduced aggregation, and preferential dipole orientation, leading to phosphor‐sensitized fluorescence OLEDs with enhanced external quantum ...
Nargis Ali   +3 more
wiley   +1 more source

Home - About - Disclaimer - Privacy