Results 71 to 80 of about 156,793 (303)

Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

Nature Communications, 2020
Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external ...
Chang Yi, Chao Liu, Kaichuan Wen, Xiao-Ke Liu, Hao Zhang, Yong Yu, Ning Fan, Fuxiang Ji, Chaoyang Kuang, Bo Ma, Cailing Tu, Ya Zhang, Chen Xue, Renzhi Li, Feng Gao, Wei Huang, Jianpu Wang   +16 more
doaj   +1 more source

Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. . [PDF]

, 2007
Room temperature electroluminescence in the midinfrared near 4 µm is reported from GaInAsSbP light emitting diodes grown on GaSb by liquid phase epitaxy.
Batty, P. J., Gagis, G. S., Krier, A., Kuchinskii, V. I., Smirnov, V. M., Vasil'ev, V. I.   +5 more
core   +1 more source

Emergence of Light‐Transforming Layered Hybrid Halide Perovskites

Advanced Functional Materials, EarlyView.
The emerging class of light‐transforming layered halide perovskite materials is reviewed, outlining challenges for their development and perspectives toward application in the future. Abstract Layered hybrid halide perovskites (LHPs) have attracted considerable attention in optoelectronics.
Ghewa AlSabeh, Jovana V. Milić
wiley   +1 more source

Exciton Dissociation Dynamics in Model Donor-Acceptor Polymer Heterojunctions: I. Energetics and Spectra

, 2005
In this paper we consider the essential electronic excited states in parallel chains of semiconducting polymers that are currently being explored for photovoltaic and light-emitting diode applications.
Eric R. Bittner, John Glenn Santos Ramon, Shockley W., Stoyan Karabunarliev   +3 more
core   +1 more source

Electroluminescence from single nanowires by tunnel injection: an experimental study [PDF]

, 2007
We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire.
Federico Capasso, Ilan Shalish, Jiming Bao, Joonah Yoon, Madelung O, Mariano A Zimmler, Nakamura S, Pankove J I, Round H J, Schubert E F, Seryogin G, Venkatesh Narayanamurti, Wei Yi   +12 more
core   +2 more sources

Light-emitting diodes [PDF]

Nature, 1977
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.
openaire   +1 more source

Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)

Advanced Functional Materials, EarlyView.
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao, Christian Weinberger, Jakob Steube, Matthias Bauer, Martin Brehm, Michael Tiemann   +5 more
wiley   +1 more source

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

AIP Advances, 2016
n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition.
Ling Li, Yuantao Zhang, Long Yan, Junyan Jiang, Xu Han, Gaoqiang Deng, Chen Chi, Junfeng Song   +7 more
doaj   +1 more source

Spin injection in Silicon at zero magnetic field [PDF]

, 2009
In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact.
Aranov A. G., B. Rodmacq, J.-M. Hartmann, L. E. Nistor, L. Grenet, M. Jamet, P. Noé, P. Warin, S. Auffret, V. Calvo, Y. Samson   +10 more
core   +4 more sources

Band Alignment in In‐Oxo Metal Porphyrin SURMOF Heterojunctions

Advanced Functional Materials, EarlyView.
Porphyrin core metalation in indium‑oxo SURMOFs enables systematic tuning of band edge positions without altering the crystal structure. First‑principles calculations reveal type‑I and type‑II heterostructures as well as multi‑junction energy cascades, establishing a modular strategy for exciton funneling and charge separation in optoelectronic ...
Puja Singhvi, Nina Vankova, Thomas Heine
wiley   +1 more source