Results 181 to 190 of about 74,429 (311)

High aspect ratio organic light-emitting diodes. [PDF]

Nat Commun
Wang B, Kotadiya NB, Kim T, Mashack R, Comfort D, Huang C, Arneson CE, Kondakova M, Giebink NC, Shtein M.   +9 more
europepmc   +1 more source

Coupling of Er3+ ions and Plasmonic Modes in Vertical Nanocavities for Spectral Broadening in Telecom Bands

Advanced Materials Technologies, EarlyView.
Left: Illustration of the glass & nanostructures system and the NIR emission at 1.5 µm, where the colored spheres represent the Er3+ ions within the doped glass. Right: Representation of the Stark splitting of the 4I13/2 and 4I15/2 manifolds of the Er3+, illustrating how the plasmonic modes facilitate the emission from the broader Stark manifold ...
Gaston Lozano Calderón, Víctor Anthony García Rivera, Stéphan Cagnon, Souleymane Toubou Bah, Younès Messaddeq, Euclydes Marega Junior   +5 more
wiley   +1 more source

High efficiency, high color purity red micro-light-emitting diodes. [PDF]

Light Sci Appl
Wu Y, Xiao Y, Reddeppa M, Malhotra Y, Guo Y, Xiao J, Liu J, Wang D, Sun K, Mi Z.   +9 more
europepmc   +1 more source

Bidirectional Process Prediction in the Laser‐Induced‐Graphene Production Using Blackbox Deep Learning

Advanced Materials Technologies, EarlyView.
This study shows that a lightweight blackbox neural network provides a practical, cost‐effective solution for bidirectional process prediction in laser‐induced graphene (LIG) fabrication. Achieving high predictive performance with minimal overhead, the approach democratizes machine learning (ML) for resource‐limited environments.
Maxim Polomoshnov, Nitheesh M. Nair, Gerardo Hernández‐Sosa, Markus Reischl   +3 more
wiley   +1 more source

Vapor-deposited copper iodide cluster-based light-emitting diodes for pico-projector. [PDF]

Sci Adv
Luo Y, Yang L, Zhang X, Ou J, Wang F, Tang J, Luo J.   +6 more
europepmc   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source

Epitaxial n-ZnO/MoS₂/p-GaN Heterostructure Light-Emitting Diodes. [PDF]

Nano Lett
Rahmatulloh I, Dalayoan DJC, Ali A, Shin S, Nguyen ATD, Kwon T, Behera S, Lee J, Kim H, Jeong HY, Namgung S, Yi GC, Chung K.   +12 more
europepmc   +1 more source

Understanding Interfacial Photoswitching Mechanisms in Atomically‐Thin TMD‐Spiropyran Hybrids

Advanced Materials Technologies, EarlyView.
Photochromic molecules can effectively modulate the optoelectronic properties of atomically thin transition metal dichalcogenide semiconductors. Spiropyran that switches its chemical configuration upon alternating UV and visible irradiation enables light‐programmable optoelectronic devices.
Sewon Park, Jaehoon Ji, Michael Brophy, John Audi, Jean Rouillon, Carlos Benitez‐Martin, Joakim Andréasson, Jeong Ho You, Jong Hyun Choi   +8 more
wiley   +1 more source

High-performance thermally-evaporated light-emitting diodes via one-step vapor purification. [PDF]

Light Sci Appl
Zhang X, Wu Y, Ou J, Shen Z, Liu N, Alshahrani T, Mohd Yusoff ARB, Tang J, Luo J.   +8 more
europepmc   +1 more source

Exploring the Synergy of Combining BINAP and tCzBN Motifs Within Multi‐Resonant TADF Emitters to Enhance OLED Performance

Advanced Optical Materials, EarlyView.
This work presents two MR‐TADF emitters, BINAP‐BN1 and BINAP‐BN2, based on a BINAP core and differing numbers of tCzBN units. Both emitters show similar solution photophysics, but distinct behavior in doped films, where BINAP‐BN1 exhibits higher photoluminescence quantum yield and suppressed aggregation‐induced emission broadening compared to BINAP‐BN2.
John Marques dos Santos, Debasish Barman, Rangani Wathsala Weerasinghe, Tomas Matulaitis, David B. Cordes, Aidan P. McKay, Youichi Tsuchiya, Chihaya Adachi, Eli Zysman‐Colman   +8 more
wiley   +1 more source