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III–Nitride-Based Microarray Light-Emitting Diodes with Enhanced Light Extraction Efficiency

Japanese Journal of Applied Physics, 2008
In this paper, the enhancement of light extraction efficiency in III–nitride-based light-emitting diodes (LEDs) with an array of microstructures is demonstrated numerically and experimentally at the near-ultraviolet (n-UV) spectral region. Two different microstructures are adopted to study the mechanism, including the shallow etching of microstructures
Mount-Learn Wu   +4 more
openaire   +1 more source

Improved Light Extraction Efficiency in GaN-Based Light Emitting Diodes

2011
The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field. GaN-based light-emitting diodes (LEDs) have made a lot of progress with regard to growth, doping, and p-ohmic contacts [1–
openaire   +1 more source

Light extraction efficiency from LED displays with scattering optical cavities

Applied Optics, 1982
A model enabling determination of light extraction efficiency from stretched segment LED displays with scattering optical cavities is given. Calculations were performed for various cavities, and numerical results are compared with measurement results reported in available literature.
openaire   +2 more sources

Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

Applied Physics Express, 2013
Light extraction efficiency (LEE) in AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip and vertical LED structures, LEE is obtained to be
Han-Youl Ryu   +3 more
openaire   +1 more source

Integrated optical light directing structures in CMOS to improve light extraction efficiency

2010 International Conference on Microelectronics, 2010
The directionality and external optical power of CMOS light sources was improved a factor 3.9 by implementing integrated light reflectors in an unmodified CMOS process. Implementing such reflectors successfully demonstrated a CMOS micro-display and a 350 MHz Si optical communication link.
Alfons W. Bogalecki   +4 more
openaire   +1 more source

Physics of light extraction efficiency in planar microcavity light-emitting diodes

1999
We use the modifications of spatial mode distributions in planar microcavities to address the issue of light outcoupling in devices such as LEDs. Whereas detailed calculations are needed to fully model and optimize the structures, we show that a simple picture can be obtained that clarifies the main physical effects of the microcavity.
openaire   +1 more source

Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs

, 2021
Zhihua Zheng   +10 more
semanticscholar   +1 more source

Light Extraction Efficiency Improvement Techniques in Light-Emitting Diodes

2023
M. Manikandan   +4 more
openaire   +1 more source

On the Light Extraction Efficiency for III-Nitride-Based Light-Emitting Diodes

2019
Considering the large contrast of the refractive index between the air and the III-nitride semiconductor layer, the external quantum efficiency for III-nitride-based light-emitting diodes is strongly influenced by the light extraction efficiency. This chapter reviews the current status for the technologies that have been adopted thus far to improve the
Zi-Hui Zhang   +4 more
openaire   +1 more source

Nanowire-based telecom-band light-emitting diodes with efficient light extraction

Japanese Journal of Applied Physics, 2020
Guoqiang Zhang   +7 more
openaire   +1 more source

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