Results 111 to 120 of about 482,559 (249)

Spectrally Programmable Spin‐Polarized Photocurrents in WSe2–NiPS3 Magnetic van der Waals Heterostructures

Advanced Materials, EarlyView.
Heterostructure photodiode devices of p‐type WSe2 with n‐type NiPS3 constructs spectrally protected spin‐polarized photocurrents. The energy of the excitation photon serves as an independent control parameter for spin‐selective photocurrent generation. ABSTRACT Efficient generation and control of spin‐polarized currents in semiconductors remain central
Rajesh Kumar Yadav, Michal Poplinger, Adi Levi, Adi Harchol, Nirman Chakraborty, Thomas Brumme, Thomas Heine, Efrat Lifshitz, Doron Naveh   +8 more
wiley   +1 more source

Spectrally Coordinated Plasmonic–Photothermal Photocatalysts for Mineralization of Mixed Indoor VOCs Under White LED Illumination

Advanced Materials, EarlyView.
A plasmonic–photothermal–photocatalytic hybrid comprising Cu(II)‐grafted TiO2, yolk–shell Au@SiO2, and reduced graphene oxide sheets (CuT/AuSi‐GS) harvests full‐spectrum white light‐emitting diode (LED) light via complementary photocatalytic oxidation, localized surface‐plasmon‐resonance‐induced electric‐field enhancement, and photothermal acceleration.
Minhyung Lee, Geun Young Kim, Gahye Shin, Haein Cho, Juwon Lee, Jinglin Wen, Wooyul Kim, Changha Lee, Kangwoo Cho, Jae‐Hyuk Kim, Hyoung‐il Kim   +10 more
wiley   +1 more source

Light-emitting diodes and their applications in energy-saving lighting

, 2011
New light-emitting diode technology offers significant promise for reducing energy usage in lighting and display applications. This paper introduces light-emitting diodes, sets their performance in context and predicts how an ultimate reduction of up to
Michelle A. Moram
core   +1 more source

Probing the Architecture of Organic Heterojunctions Based on Zn(Salen)‐Type/Lu(Bis‐phthalocyanine) Complexes and Their Potential Application as Gas Sensors

Advanced Materials Interfaces, EarlyView.
Planar bilayer heterojunctions are fabricated from two molecular materials and compared to solution‐processed bulk heterojunctions. Raman spectroscopy and conductive AFM studies reveal the formation of conductive pillar‐like structures within a poorly conductive matrix.
Agostino Attinà, Petr Bečvár, Martin Hruska, Rita Meunier‐Prest, Eric Lesniewska, Santo Di Bella, Marcel Bouvet   +6 more
wiley   +1 more source

INSTRUMEN SUMBER CAHAYA LIGHT EMITTING DIODE (LED) UNTUK FOTODINAMIK INAKTIVASI BAKTERI PATOGEN [PDF]

, 2013
Invensi ini berhubungan dengan suatu instrumen sumber cahaya Light Emitting Diode (LED) yang digunakan untuk fotodinamik inaktivasi bakteri patogen.
Agus Supriyanto, NIDN. 0024086208, Kuwat Triyana, Suryani Dyah Astuti, NIDN. 0008046902   +2 more
core   +1 more source

Bright and stable quantum confined CsPbBr3 nanocrystals through post-synthetic chemical cutting and in-situ encapsulation

Nano Research
Quantum-confined CsPbBr3 nanocrystals are promising cyan/blue-emitting materials with exceptional potential for advanced lighting and display technologies.
Hao Zhang, Jiang Chen, Tiantian Zhu, Rui Wang, Xuemei Wang, Xijun Xu, Jianli Wang   +6 more
doaj   +1 more source

Light Emitting Diode Motorcycle (LEDIM) [PDF]

, 2016
1.Innovation and Invention Competition Through Exhibition 2016 (iCompEx 2016) (Silver medal)A Light Emitting Diode Motorcycle (LEDiM) is developed to replace the motorcycle normal bulb lighting system.
Nazmy Bin Mahadzir, Saharul Bin Arof, UniKL MSI, Julaida Binti Abdul Jalil, Mohd Rezal Bin Mohamed   +4 more
core  

Thermal Enhancement of TADF‐OLED Performance: Size of Active Area Matters

Advanced Materials Interfaces, EarlyView.
Large‐area TADF‐based OLEDs can be used as thermally assisted light‐emitting devices, in which moderate waste heat can partially compensate for efficiency losses associated with increasing active area. ABSTRACT Temperature significantly impacts the performance of light‐emitting diodes, typically causing degradation as they heat up. However, OLEDs using
Demyd V. Pekur, Denis M. Khmil, Petro S. Smertenko, Alexander N. Fedoryak, Chih‐Hung Ko, Chih‐Hao Chang, Dovydas Blazevicius, Gintare Krucaite, Saulius Grigalevicius, Oleg P. Dimitriev   +9 more
wiley   +1 more source

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

, 2010
To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition.
Yang H, Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn, Zhu JH, Zhao DG, Wang YT, Wang LJ, Zhu JJ, Zhang SM, Liu ZS, Jiang DS   +9 more
core   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source