Results 201 to 210 of about 2,986,448 (239)

Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

open access: yesApplied Physics Letters, 2012
We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of similar to 100% is observed, while the associated B ...
Pascal Gehring
exaly   +2 more sources
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Linear magnetoresistance of aluminum

Journal of Low Temperature Physics, 1974
The transverse magnetoresistivity of pure single crystals of aluminum (RRR ∼22,000) has been studied at 4.2 K and in high magnetic fields using the hard helicon technique. The measured magnetoresistivity is separated into a saturating and a linearly increasing part, and the effect of deformation and quenching on the linear component is studied.
T. Amundsen, P. Jerstad
openaire   +1 more source

Classical and quantum routes to linear magnetoresistance

Nature Materials, 2008
The hallmark of materials science is the ability to tailor the microstructure of a given material to provide a desired response. Carbon mixed with iron provides the steel of buildings and bridges; impurities sprinkled in silicon single crystals form the raw materials of the electronics revolution; pinning centres in superconductors let them become ...
Hu, Jingshi, Rosenbaum, T. F.
openaire   +3 more sources

Magnetoresistive thick film sensor for linear displacements

Sensors and Actuators A: Physical, 1995
Abstract A new thick film material has been developed starting from Ni and Co powders in the ratio Ni:Co = 3:1. The thermal treatment (in N2, up to 950 °C) of the metal films deposited on glazed alumina enables the in situ formation of the NiCo alloy.
B. MORTEN   +4 more
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Search for linear magnetoresistance in aluminum

Solid State Communications, 1974
Abstract The induced torque from high-purity aluminum for magnetic field rotation in a (100) plane exhibits little high-field linear magnetoresistance except for a narrow angular region (±3°) around 〈100〉 directions. The dimensionless slope of the high-field magnetoresistance determined from the induced torque is up to 25 times smaller than that ...
R.J. Douglas, W.R. Datars
openaire   +1 more source

Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene

Nano Letters, 2010
We report the first observation of linear magnetoresistance (LMR) in multilayer epitaxial graphene grown on SiC. We show that multilayer epitaxial graphene exhibits large LMR from 2.2 K up to room temperature and that it can be best explained by a purely quantum mechanical model. We attribute the observation of LMR to inhomogeneities in the epitaxially
Jennifer K Hite   +2 more
exaly   +3 more sources

Linear magnetoresistance of a metal with holes

Physica Status Solidi (a), 1976
An investigation is made of the conductivity of a two component material in a magnetic field using a macroscopic effective medium approach. The model describes spherical inclusions of different conductivity large compared to the mean free path of the electrons.
K. D. Schotte, D. Jacob
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Linear magnetoresistance of potassium

Journal of Physics C: Solid State Physics, 1970
Measurements of the linear magnetoresistance effect in pure potassium were made using two independent methods. Four-terminal measurements on straight narrow samples showed transverse and longitudinal effects of the same magnitude. An induced torque method was then used on large good single crystals.
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Magnetism and linear field magnetoresistivity in UPt3

Physica B: Condensed Matter, 1990
Abstract The temperature dependence of the transverse magnetoresistivity (upto 7.6 tesla) for heavy fermion UPt3 has been studied The linear term in the field dependence of resistivity is found to decrease with increasing temperature and vanishes for T> 6 K.
K. Behnia   +3 more
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Linear Magnetoresistance in Parabolic Semiconductors

physica status solidi (b), 1975
AbstractA density matrix approach is described to calculate the complete ohmic magnetoresist‐ivity tensor for a non‐degenerate and non‐polar semiconductor with isotropic effective mass. The conventional methods using the Boltzmann transport equation cannot be used in a satisfactory way with magnetic fields of arbitrary strength.
openaire   +1 more source

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