Results 61 to 70 of about 2,986,448 (239)

Linear magnetoresistance in HgTe quantum wells [PDF]

Physical Review B, 2013
We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal symmetry and thereby, suppresses the edge state transport. A linear magnetoresistance is observed in low magnetic
Gusev, G. M., Olshanetsky, E. B, Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A.   +4 more
openaire   +2 more sources

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Magnetoresistance and ion bombardment induced magnetic patterning [PDF]

, 2008
Höink V. Magnetoresistance and ion bombardment induced magnetic patterning. Bielefeld (Germany): Bielefeld University; 2008.In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect
Höink, Volker
core  

Magnetoresistance from Fermi surface topology [PDF]

Extremely large nonsaturating magnetoresistance has recently been reported for a large number of both topologically trivial and nontrivial materials. Different mechanisms have been proposed to explain the observed magnetotransport properties, yet without
Yazyev, Oleg V., Liu, Yi, Zhang, ShengNan, Wu, QuanSheng   +3 more
core   +2 more sources

Measuring the Hall Effect in Hysteretic Materials

Advanced Materials, EarlyView.
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya, Anthony Voyemant, Sudipta Chatterjee, Scott B. Lee, Grigorii Skorupskii, Connor J. Pollak, Leslie M. Schoop   +6 more
wiley   +1 more source

Why Is the Mechanism Underlying the Chiral‐Induced Selectivity Effect Still Challenging?

Advanced Materials, EarlyView.
The chiral‐induced spin selectivity (CISS) effect is observed in many experimental configurations and for different materials. However, there are theoretical challenges in attempting to explain those results. A qualitative framework for explaining all the results is presented.
Ron Naaman, Yossi Paltiel
wiley   +1 more source

Design, fabrication, and characterization of magnetic nanostructures

, 2008
For several years, thin films of ferromagnetic materials with metallic spacer layers showing giant magnetoresistance (GMR) were the technological basis used in the read-heads of hard disk drives. Similarly, tunnelling magnetoresistance (TMR), which is an
Claudio Gonzalez, David
core   +1 more source

Linear magnetoresistance in compensated graphene bilayer [PDF]

Physical Review B, 2016
We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model.
Vasileva, G. Yu, Smirnov, D., Ivanov, Yu L., Vasilyev, Yu. B., Alekseev, Pavel S., Dmitriev, Alexander P., Gornyi, Igor V., Kachorovskii, Valentin Yu, Titov, Mikhail O., Narozhny, Boris N., Haug, Rolf J.   +10 more
openaire   +4 more sources

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

Advanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi, Woonghee Cho, Pyeongjae Park, Woun Kang, Je‐Geun Park, Younjung Jo   +5 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source