Results 61 to 70 of about 34,641 (302)
Spectrum evolution of Rayleigh backscattering in one-dimensional waveguide
Despite the tremendous awareness of Rayleigh scattering characteristics and its considerable research interest for numerous fields, no report has been documented on the dynamic characteristics of spectrum evolution (SpE) and physical law for Rayleigh ...
Li Fuhui +5 more
doaj +1 more source
Orbital Geometry‐Governed Response of Pressure‐Tunable Quantum Defects in hBN
Defects in hBN act as ultrasensitive quantum manometers when the energy of the intradefect optical transitions is modified by lattice compression. The orbital geometry of the electron wave functions governs how electron hopping and Coulomb interactions react uniquely to the reduction of the van der Waals gap and in‐plane compression, leading to robust ...
Magdalena Grzeszczyk +6 more
wiley +1 more source
Recent progress on narrow-linewidth crystalline bulk Raman lasers
Narrow-linewidth, solid-state Raman lasers are of significant importance for numerous applications. In last decade, variety of methods have been utilized to suppress the spectral linewidth of Raman laser output.
Quan Sheng +5 more
doaj +1 more source
Tunable laser performance sources with requirements of higher optical power and narrower linewidth become widely demands due to massive usage of network capacity driven by new applications and services associated with web-scale networking.
Harun, Sulaiman Wadi +7 more
core
Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus +8 more
wiley +1 more source
In this paper, the "short-time" part of the linewidth of a laser beam has been considered with the fundamental equations which describe the behaviours of lasers. This linewidth is described usually by △vs=(8πhv(△v′)2)/P, (1) here △v′ is the half-width of the electromagnetic mode of cavity, v the beam frequency, and P the output power.
null FANG LI-ZHI, null LUO YI-ZU
openaire +1 more source
Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi +9 more
wiley +1 more source
All-solid continuous-wave Nd: YVO4-diamond intracavity Raman laser
We demonstrated a continuous intracavity diamond Raman laser operating by linear-cavity and V-cavity design. The diamond crystal as the Raman medium and Nd: YVO4 as the laser gain medium was utilized to achieve high beam quality Stokes output with narrow
Yunpeng Cai +8 more
doaj +1 more source
In recent years, mid-infrared fiber lasers based on gas-filled photonic crystal hollow-core fibers (HCFs) have attracted enormous attention. They provide a potential method for the generation of high-power mid-infrared emissions, particularly beyond 4 μm.
Wenxi Pei +5 more
doaj +1 more source
Interface Effects in Ultrathin Silicon on Insulator Films
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source

