Results 121 to 130 of about 20,099 (257)
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Through the introduction of a niobium oxide layer into a hafnia ferroelectric capacitor stack, we build a memory device with a strong imprint effect. This imprint leads to a millisecond retention loss that can be tuned by the programming conditions that can be utilized as a scalable, analog hardware time constant for bio‐inspired temporal computing ...
Luca Fehlings +3 more
wiley +1 more source
Experimental Comparison and Empirical Path Loss Modeling of LoRa Communication in Line-of-Sight and Forest Environments at 923 MHz. [PDF]
Boonlom K +3 more
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Security-Aware Codebook Design for Low-PAPR AFDM Systems. [PDF]
Zhang T, Dai H.
europepmc +1 more source
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi +8 more
wiley +1 more source
Low-power analog and mixed-signal circuit techniques for next-generation miniature implantable neural interface systems. [PDF]
Zhao L, Jia Y.
europepmc +1 more source
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez +10 more
wiley +1 more source
Hierarchical Semantic Transmission and Lyapunov-Optimized Online Scheduling for the Internet of Vehicles. [PDF]
Jiang L, Guo Y, Zhang W, Wang P, Han S.
europepmc +1 more source

