Results 191 to 200 of about 27,281 (284)
Organic Thin‐Film Transistors for Neuromorphic Computing
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
Humans: An integrative review exploring dehumanisation in advanced dementia. [PDF]
Bøgmose J +3 more
europepmc +1 more source
The Argument Web: an Online Ecosystem of Tools, Systems and Services for Argumentation. [PDF]
Reed C +7 more
europepmc +1 more source
Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source
Innovations in Parkinson's Disease: Strategies and Novel Technologies. [PDF]
Sha R +4 more
europepmc +1 more source
The Semantics of Sentence Mood in Typologically Differing Languages [PDF]
Hattori, Shirô, Zaefferer, Dietmar
core
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
The impact of a 1 mm interimplant distance on the interproximal crestal bone height: a case report with a 10-year follow-up and literature review. [PDF]
Morales Schwarz D +3 more
europepmc +1 more source
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan +21 more
wiley +1 more source

