Results 71 to 80 of about 3,679,425 (232)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Geospatial Visualization of Logarithmic Attenuation of Pile-Driving Noise Based on Field Measurements

Engineered Science
Pile-driving operations in construction generate intense pulsed noise, creating safety problems at the construction site and potentially causing concern in nearby communities.
Yelbek Utepov, Assel Mukhamejanova, Aida Nazarova, Aida Nazarova, Aleksej Aniskin, Aigul Kozhas, Alisher Imanov   +6 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

ANPERC-source/SEG_Annual: Database_Annual meetings v2.0

, 2020
The database of the SEG Annual meetings v2.0 This repository includes data for the words and phrases frequency of occurrence analysis "SEGgrams.sqlite" and the database "SEG_affiliations_data.sqlite" consisting of the industry companies and different ...
ANPERC-source
core   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing

Advanced Functional Materials, EarlyView.
Maskless direct laser writing enables local control of oxygen stoichiometry in epitaxial YBCO thin films under ambient conditions. Sub‐micrometer grayscale patterns with tunable optical response and superconducting transport properties are achieved.
Irene Biancardi, Valerio Levati, Jordi Alcalà, Thomas Günkel, Nicolas Lejeune, Riccardo Girelli, Alejandro V. Silhanek, Valeria Russo, Narcís Mestres, Daniela Petti, Anna Palau, Edoardo Albisetti   +11 more
wiley   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Enhancing the Source-Side Transient Response of Logarithmic Double-Spiral Terahertz Photoconductive Antennas Using a Central-Feed-Boundary Tip Array

Micromachines
The smooth central feed boundary of a logarithmic double-spiral terahertz photoconductive antenna can limit the spatial overlap between the high-field region and photogenerated carriers, thereby restricting the source-side transient response.
Chao Xu, Shuaiqi Wang, Yu Zhang, He Dong, Jian Gao, Guofeng Wang   +5 more
doaj   +1 more source

Blue Upconversion Organic Light‐Emitting Diodes Achieving 1000 cd m−2 With an Operating Voltage of 2.7 V by Suppressing Interfacial Exciton Quenching

Advanced Functional Materials, EarlyView.
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui, Hiroto Iwasaki, Kosuke Anraku, Ken Albrecht, Yutaka Majima, Seiichiro Izawa   +5 more
wiley   +1 more source