Results 151 to 160 of about 2,396,703 (177)

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

Advanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio, Rikhard Ranta, Sayani Majumdar   +2 more
wiley   +1 more source

Analysis of dynamic cyclic fatigue resistance of different endodontic nickel-titanium instruments with different sterilization methods: An <i>in vitro</i> study. [PDF]

J Conserv Dent Endod
Patel N, Langaliya AK, Patel S, Kothari AK, Malaviya G, Yadav S.   +5 more
europepmc   +1 more source

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

Advanced Electronic Materials, EarlyView.
The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng, Wei‐Ning Kao, Yu‐Hsing Chen, Yung‐Hsien Wu   +3 more
wiley   +1 more source

An optimized informer model design for electric vehicle SOC prediction. [PDF]

PLoS One
Xie X, Huang F, Long Y, Peng Y, Zhou W.
europepmc   +1 more source

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Advanced Electronic Materials, EarlyView.
The defects in the charge‐trapping layer are believed to be responsible for endurance degradation in organic transistor nonvolatile memory (ONVM). The ONVM employing thermally treated n‐type semiconductor as the charge‐storage layer can maintain prolonged stable endurance for up to 104 cycles through annealing the charge‐trapping layer, paving the way ...
Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu   +8 more
wiley   +1 more source

An algorithm for heterogeneous wireless network connections for user preferences and services. [PDF]

Sci Rep
Krishnan SD, Daniel A, Ayyasamy S, Balusamy B, Selvarajan S, Al-Shehari T, Alsadhan NA.   +6 more
europepmc   +1 more source

Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation

Advanced Electronic Materials, EarlyView.
Cryogenic first firing in SiGeAsTe‐based Ovonic Threshold Switch (OTS) devices enhances stochastic switching, increasing trap generation and switching variability up to fourfold. This enables stable, high‐speed entropy generation (>20 Mbit s−1) without reference values, ensuring robustness under cycling.
Dongmin Kim, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Pendar Azaripour Masouleh, Jisung Lee, Joonhyun Kwon, Chul‐Heung Kim, Hyunsang Hwang   +8 more
wiley   +1 more source

Scaling-up molecular logic to meso-systems via self-assembly. [PDF]

Nat Commun
Chen ZQ, Daly B, Yao CY, Crory HSN, Xu Y, Ye Z, Gunaratne HQN, Kimura A, Uchiyama S, Bell SEJ, Anslyn EV, de Silva AP.   +11 more
europepmc   +1 more source

Advances of Carbon Nanotube Based Flexible Amplifiers for Skin‐Mounted Physiological Signal Monitoring

Advanced Electronic Materials, EarlyView.
Flexible carbon nanotube thin‐film transistors (CNT TFTs) amplifiers are reviewed. It covers fabrication strategies on flexible substrate, including the selection of flexible substrate, device innovation, realization of complementary metal‐oxide‐semiconductor (CMOS) technology.
Haitao Zhang, Yulong Yuan, Jian Hu, Li Xiang   +3 more
wiley   +1 more source

FeFET-Based Computing-in-Memory Unit Circuit and Its Application. [PDF]

Nanomaterials (Basel)
Zha X, Ye H.
europepmc   +1 more source