Results 161 to 170 of about 2,396,703 (177)

An Ultrathin Optoelectronic Memristor with Dual‐Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou   +4 more
wiley   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

open access: yesAdvanced Electronic Materials, EarlyView.
This study presents the first experimental demonstration of a vertically stacked complementary field‐effect transistor (CFET) using zinc oxide (ZnO) and tellurium (Te), providing a significant advancement in CFET technology. Furthermore, functional logic gates with a minimal footprint are demonstrated, confirming that vertical integration of CFETs is ...
Kiyung Kim   +8 more
wiley   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh   +2 more
wiley   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez   +14 more
wiley   +1 more source

Attojoule Superconducting Thermal Logic and Memories. [PDF]

open access: yesNano Lett
Wang H   +7 more
europepmc   +1 more source

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