Numerical analysis of an all-optical logic XOR gate based on an active MZ interferometer [PDF]
, 2003 M.L. Nielsen +3 more
openalex +1 more source
Author Correction: A shuttling-based two-qubit logic gate for linking distant silicon quantum processors. [PDF]
Nat Commun, 2022 Noiri A +6 more
europepmc +1 more source
Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor
Advanced Electronic Materials, EarlyView.This manuscript presents the first and simplest ever‐reported electrical cell, which leverages one memristor on Edge of Chaos to reproduce the three‐bifurcation cascade, marking the entire life cycle from birth to extinction via All‐to‐None effect of an electrical spike, also referred to as Action Potential, across axon membranes under monotonic ...
Alon Ascoli +12 more
wiley +1 more source
Numerical Simulation of Quantum Logic Gates Based on Quantum Wires
, 2001 Andrea Bertoni +4 more
openalex +1 more source
CMOS-compatible vertical MOSFETs and logic gates with reduced parasitic capacitance [PDF]
, 2004 V.D. Kunz +5 more
openalex +1 more source
Design and Use of a Gold Nanoparticle-Carbon Dot Hybrid for a FLIM-Based IMPLICATION Nano Logic Gate. [PDF]
ACS Omega, 2022 Pawar S, Duadi H, Fleger Y, Fixler D.
europepmc +1 more source
Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing
Advanced Electronic Materials, EarlyView.The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng +3 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.The defects in the charge‐trapping layer are believed to be responsible for endurance degradation in organic transistor nonvolatile memory (ONVM). The ONVM employing thermally treated n‐type semiconductor as the charge‐storage layer can maintain prolonged stable endurance for up to 104 cycles through annealing the charge‐trapping layer, paving the way ...
Zhenliang Liu +8 more
wiley +1 more source
Fabrication and Functionalisation of Nanocarbon‐Based Field‐Effect Transistor Biosensors
ChemBioChem, Volume 23, Issue 23, December 5, 2022., 2022 Next‐generation diagnostics: Nanocarbon‐based field effect transistors (NC‐FETs) use incoming target analytes to impart a gating effect on conductance. Here, we review the operational mechanisms behind NC‐FETs, the fabrication and functionalisation of NC‐FETs with receptor biomolecules and downstream biosensing applications.
Chang‐Seuk Lee +4 more
wiley +1 more source
Franson-type experiment realizes two-qubit quantum logic gate
, 2001 Kaoru Sanaka +2 more
openalex +2 more sources