Light-Controlled Soft Switches for Optical Logic Gate Operations. [PDF]
Wang C, Wu H, Niu Q, Yan X, Wang X.
europepmc +1 more source
Correction to: wpLogicNet: logic gate and structure inference in gene regulatory networks. [PDF]
europepmc +1 more source
Design and Synthesis of a Novel ICT Bichromophoric pH Sensing System Based on 1,8-Naphthalimide Fluorophores as a Two-Input Logic Gate and Its Antibacterial Evaluation. [PDF]
Sakr AR, Georgiev NI, Bojinov VB.
europepmc +1 more source
Flexible carbon nanotube thin‐film transistors (CNT TFTs) amplifiers are reviewed. It covers fabrication strategies on flexible substrate, including the selection of flexible substrate, device innovation, realization of complementary metal‐oxide‐semiconductor (CMOS) technology.
Haitao Zhang+3 more
wiley +1 more source
The Radical Anion, Dianion and Electron Transport Properties of Tetraiodotetraazapentacene
Filling the gap in the series of halogenated azaacenes. Tetraiodotetraazapentacene I4TAP is prepared and characterized. Its stable radical anion and high mobilities in organic field‐effect transistors make I4TAP a formidable n‐type semiconductor.
Thomas Wiesner+16 more
wiley +1 more source
IST-LASAGNE: towards all-optical label swapping employing optical logic gates and optical flip-flops [PDF]
F. Ramos+21 more
openalex +1 more source
On logic gates with complex numbers
Logic gates can be written in terms of complex differential operators, where the inputs and outputs are holomorphic functions with several variables. Using the polar representation of complex numbers, we arrive at an immediate connection between the oscillatory behavior of the system and logic gates.
openaire +2 more sources
Five-membered heterocycles as promising platforms for molecular logic gate construction. [PDF]
Ciupa A.
europepmc +1 more source
A gating lever and molecular logic gate that couple voltage and calcium sensor activation to opening in BK potassium channels. [PDF]
Sun L, Horrigan FT.
europepmc +1 more source
Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor
This study presents the first experimental demonstration of a vertically stacked complementary field‐effect transistor (CFET) using zinc oxide (ZnO) and tellurium (Te), providing a significant advancement in CFET technology. Furthermore, functional logic gates with a minimal footprint are demonstrated, confirming that vertical integration of CFETs is ...
Kiyung Kim+8 more
wiley +1 more source