Results 251 to 260 of about 308,148 (284)

Reconfigurable Combinational Logic Operations Using Triple‐Gated Feedback Field‐Effect Transistors for Logic‐In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this study, we demonstrated that four distinct combinational logic operations can be reconfigured and executed within a single circuit structure, where each reconfigurable logic‐in‐memory cell dynamically adapts its function. The reconfigurable logic‐in‐memory cell, composed of triple‐gated feedback field‐effect transistors, performs NOT, AND, OR ...
Dongki Kim, Yunwoo Shin, Hyojoo Heo, Kyoungah Cho, Sangsig Kim   +4 more
wiley   +1 more source

Optical Logic Gates Using Interconnected Photodiodes and Electro-Absorption Modulators.

, 2016
Erik J. Skogen
openalex   +1 more source

ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics

Advanced Electronic Materials, EarlyView.
By directly comparing PEALD (P‐IGZO) and thermal‐ALD (T‐IGZO), we show that oxidant reactivity governs atomically ordered InOx–(Ga, Zn)O nanolaminates and a robust 2DEG in amorphous IGZO. PEALD with oxygen plasma forms sharper, chemically distinct interfaces and higher InOx connectivity, achieving ∼90 cm2 V−1 s−1 mobility and superior BTI stability ...
Yoon‐Seo Kim, Daejung Kim, Ki‐Cheol Song, Yeonhee Lee, Hyeong‐Suk Yoo, Young Jae Kim, Jonghoon Kim, Jin‐Seong Park   +7 more
wiley   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

Advanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar   +2 more
wiley   +1 more source

Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach

Ji Hwan Lee, Kihwan Kim, Kyungjin Rim, Soogine Chong, H.S. Cho, Saeroonter Oh   +5 more
openalex   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs

Advanced Electronic Materials, EarlyView.
An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han, Been Kwak, Hyun‐Min Kim, Dahye Yu, Daewoong Kwon   +4 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kimh, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

Advanced Energy and Sustainability Research, EarlyView.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar, Arunkumar Chandrasekhar, Poongundran Selvaprabhu   +2 more
wiley   +1 more source