Results 291 to 300 of about 1,643,996 (384)

All Organic Fully Integrated Neuromorphic Crossbar Array

Advanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt   +2 more
wiley   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
wiley   +1 more source

Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors

Advanced Electronic Materials, EarlyView.
Using a first‐principles quantum transport approach, the intrinsic transport properties of 2D BX (X = P, As, Sb) materials are investigated. These materials exhibit high on‐currents and excellent ambipolar symmetry in MOSFET configurations, and break the Boltzmann limit of subthreshold swing in TFETs while maintaining high and symmetric bipolar ...
Shuai Lang, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong   +4 more
wiley   +1 more source

Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions

Advanced Electronic Materials, EarlyView.
Neuromorphic computing reduces energy costs by integrating memory and processing in event‐driven architectures, achieving energy usage as low as 10–30 pJ per operation for memcapacitor‐based synapses. Memcapacitors are reviewed as strong contenders for neuromorphic computing, enhancing AI acceleration through charge‐based computations, high resistance,
Nada AbuHamra, Muhammad Umair Khan, Eman Hassan, Mahmoud Al Qutayri, Baker Mohammad   +4 more
wiley   +1 more source

Theoretical and experimental investigation on all-optical logic gates based on photoisomerization

, 2007
Yanming Li, Lixiang Chen, Weilong She
openalex   +1 more source

Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors

Advanced Electronic Materials, EarlyView.
We demonstrate a U‐shape ambipolar Schottky barrier field‐effect transistor fabricated on silicon‐on‐insulator substrate. The geometry naturally enables gate‐all‐around operation and long channel lengths within a compact footprint, while simplifying self‐aligned contact formation compared to conventional 3D architectures. The current device is realized
Cigdem Cakirlar, Bruno Neckel Wesling, Konstantinos Moustakas, Giulio Galderisi, Sylvain Pelloquin, Oskar Baumgartner, Mischa Thesberg, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer   +9 more
wiley   +1 more source

A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach

Advanced Electronic Materials, EarlyView.
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka, Yeohoon Yoon, Laura Teuerle, Tommy Meier, Hans Kleemann, Ghader Darbandy, Benjamin Iniguez   +6 more
wiley   +1 more source

Optimizing Optical Quantum Logic Gates using Genetic Algorithms

, 2007
Zhanghan Wu, Sean D. Huver, D. B. Uskov, Hwang Lee, Jonathan P. Dowling   +4 more
openalex   +2 more sources

High‐Performance Monolayer 1T‐GeO2 Transistors with Low‐Resistance Metal Contacts

Advanced Electronic Materials, EarlyView.
First‐principles quantum transport simulations reveal that monolayer 1T‐GeO2 forms ideal Ohmic contacts with conventional metals due to suppressed Fermi‐level pinning. The devices exhibit high on‐state currents of 1151–3237 nA nm−1 and ultralow contact resistance of 35.33–54.03 Ω·µm, outperforming state‐of‐the‐art 2D and oxide semiconductors in ...
Shuai Lang, Wei Zhang, Shun Song, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong   +6 more
wiley   +1 more source

All‐Optical Logic Gates and Programmable Photonic Organo‐Polymer Devices

Advanced Electronic Materials, EarlyView.
Four PDMS‐based photonic devices imitating the shapes of Y‐structure, hexagonal mesh, dual in‐phase quadrature, and cascaded MZI array are demonstrated and shown to function as all‐optical OR gates. Furthermore, a PDMS hexagonal mesh, containing dye‐doped regions, is shown to enable performance as a programmable photonic device, where its ...
Coral Raz, Alexandra Inberg, Amir Handelman   +2 more
wiley   +1 more source