Results 181 to 190 of about 13,979 (254)

Anisotropic nonlinear optical responses of Ta₂NiS₅ flake towards ultrafast logic gates and secure all-optical information transmission. [PDF]

Nanophotonics
Yan L, Gong Z, He Q, Shen D, Ge A, Dai Y, Ma G, Sun L, Zhang S.   +8 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Droplet-based logic gates simulation of viscoelastic fluids under electric field. [PDF]

Sci Rep
Santos FP, Tryggvason G, Ferreira GGS.
europepmc   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source

In‐Sensor Computing by Soft Threshold Logic Gates Under Different Humidity Conditions

Advanced Electronic Materials, EarlyView.
Soft nanocomposite materials, based on gold cluster‐assembled thin films implanted in polydimethylsiloxane substrate, can perform reliable processing in ambient environmental conditions. Humidity influences the resistive switching and computational capabilities of the nanocomposites, that can be used as multifunctional material combining sensing ...
Giacomo Nadalini, Paolo Milani, Francesca Borghi   +2 more
wiley   +1 more source

All-in-one, all-optical logic gates using liquid metal plasmon nonlinearity. [PDF]

Nat Commun
Xu J, Zhang C, Wang Y, Wang M, Xu Y, Wei T, Xie Z, Liu S, Lee CK, Hu X, Zhao G, Lv X, Zhang H, Zhu S, Zhou L.   +14 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

Advanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj, Ashfak Nehal, Dmitrii Semenov, Roman Sotner, Sayani Majumdar   +4 more
wiley   +1 more source

Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering. [PDF]

Nano Lett
Kumar A, Müller J, Pelloquin S, Lecestre A, Larrieu G.   +4 more
europepmc   +1 more source

Array‐Level Characterization of Cryogenic RRAM

Advanced Electronic Materials, EarlyView.
This paper reports the first array‐level comprehensive electrical characterization of a 1024‐device HfO2‐based RRAM array from 300, 77 to 4 K, covering forming, set/reset switching, endurance, retention, relaxation, and read disturb. The results manifest the high performance of RRAM array at cryogenic temperatures and huge application potential for ...
Yuyao Lu, Ruofei Hu, Zhixing Jiang, Feng Xu, Bin Gao, Jianshi Tang, He Qian, Huaqiang Wu   +7 more
wiley   +1 more source