Results 231 to 240 of about 6,452,641 (347)

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

Advanced Electronic Materials, EarlyView.
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +8 more
wiley   +1 more source

Memristive ternary Łukasiewicz logic based on reading-based ratioed resistive states (3R). [PDF]

Philos Trans A Math Phys Eng Sci
Liu F, Brackmann L, Zhao X, Du N, Waser R, Menzel S.   +5 more
europepmc   +1 more source

A Review of Several Programs for the Teaching of Logic [PDF]

, 1993
Doug Goldson
openalex   +1 more source

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

Advanced Electronic Materials, EarlyView.
Field‐effect transistors with layered SnSe2 channel gated by a solution top gate combine very high room‐temperature electron mobility, large on‐off current ratios, and a subthreshold swing below the thermodynamic limit at exceptionally high sheet carrier concentrations.
Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter   +3 more
wiley   +1 more source

Molecular HDD logic for encrypted massive data storage. [PDF]

Nat Commun
Guo B, Chen X, Chen A, Wang J, Xue W, Wang T, Wu Z, Zhong X, Zeng J, Li J, Li M, Xu X, Chen Y, Liu G.   +13 more
europepmc   +1 more source

Parallel Logic Programming [PDF]

, 1990
Keith Clark
openalex   +1 more source

Soft Electronic Switches and Adaptive Logic Gates Based on Nanostructured Gold Networks

Advanced Electronic Materials, EarlyView.
Reconfigurable threshold logic gates and reversible switches are here demonstrated on a flexible and stretchable substrate, by exploiting the adaptability of the complex network composed of gold cluster‐assembled film embedded in the polymer matrix.
Giacomo Nadalini, Alexander Dallinger, Davide Sottocorno, Francesco Greco, Francesca Borghi, Paolo Milani   +5 more
wiley   +1 more source

Interfacial Electronic Charge Trapping and Photonic Carrier Excitation Coupling in Solution-Processed Zinc-Tin Oxide Thin-Film Transistors Applied for Logic Gate Design and Quantized Neural Network. [PDF]

ACS Appl Mater Interfaces
Chang PH, Lin WY, Huang YC, Chen YC, Shih LC, Chen JS.   +5 more
europepmc   +1 more source

Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications

Advanced Electronic Materials, EarlyView.
By designing a four‐terminal α‐In2Se3 device, freely selective digital and analog resistive switching behavior is achieved. The oxygen plasma and gate modulation terminal enable optimized non‐volatile digital storage with low operating voltage, artificial synapses with high linearity, and dynamic range based on 128‐level analog conductance behavior ...
Siying Tian, Changhao Wang, Yuanjie Wang, Honghao Wang, Chenxi Gao, Weisen Hu, Jia Wei, Fengling Chen, Dapeng Sun, Xu Zheng, Chaobo Li, Chujun Yin   +11 more
wiley   +1 more source

Dynamic RSVP in Modern Networks for Advanced Resource Control with P4 Data Plane. [PDF]

Sensors (Basel)
Pan PA, Chin WL, Huang YC, Huang YX, Yu CH.   +4 more
europepmc   +1 more source