Results 241 to 250 of about 567,077 (336)

Mobility‐Lifetime Products in Organic Infrared Photodiodes with Peak Absorption at 1550 nm

open access: yesAdvanced Electronic Materials, EarlyView.
This study analyzes the mobility‐lifetime products in organic infrared photodiodes with different donor‐to‐acceptor ratios to examine charge collection performance. Abstract Infrared photodiodes based on organic semiconductors are promising for low‐cost sensors that operate at room temperature. However, their realization remains hampered by poor device
Bogyeom Seo   +7 more
wiley   +1 more source

Digital‐Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto‐Electronic Logic and Sen‐Memory Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Herein, the development of a protective face mask based on a hierarchically porous cerium metal‐organic framework intensifying the bacterial entrapment ability and catalytic ROS generation at ambient condition is presented. It presents almost 100% antimicrobial efficacies for different bacteria even though in insufficient light (e.g.
Jiaqi Xu   +7 more
wiley   +1 more source

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

open access: yesAdvanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio   +2 more
wiley   +1 more source

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng   +3 more
wiley   +1 more source

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