Results 291 to 300 of about 471,293 (319)

Direct‐Write Printed Contacts to Layered and 2D Materials

open access: yesAdvanced Electronic Materials, EarlyView.
It is demonstrated that direct‐write printing is a viable method to fabricate devices on different 2D and layered materials yields Ohmic contacts in a single step, as compared to multi‐step lithography processes which often yield poor contacts. Printed devices perform exceedingly well with gating, temperature cycling, and in magnetic fields.
Sharadh Jois   +12 more
wiley   +1 more source

7‐Methylquinolinium Iodobismuthate Memristor: Exploring Plasticity and Memristive Properties for Digit Classification in Physical Reservoir Computing

open access: yesAdvanced Electronic Materials, EarlyView.
Low‐dimensional 7‐methyquinolinium iodobismuthate on a silicon substrate with one input and 15 output gold electrodes as a physical reservoir devices is applied, for MNIST digit classification with 82.26% accuracy and voice classification for digit 2 for six different people with 82 % accuracy.
Gisya Abdi   +7 more
wiley   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh   +2 more
wiley   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez   +14 more
wiley   +1 more source

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