Results 291 to 300 of about 471,293 (319)
Direct‐Write Printed Contacts to Layered and 2D Materials
It is demonstrated that direct‐write printing is a viable method to fabricate devices on different 2D and layered materials yields Ohmic contacts in a single step, as compared to multi‐step lithography processes which often yield poor contacts. Printed devices perform exceedingly well with gating, temperature cycling, and in magnetic fields.
Sharadh Jois+12 more
wiley +1 more source
Vega: LLM-Driven Intelligent Chatbot Platform for Internet of Things Control and Development. [PDF]
Al-Safi H, Ibrahim H, Steenson P.
europepmc +1 more source
Low‐dimensional 7‐methyquinolinium iodobismuthate on a silicon substrate with one input and 15 output gold electrodes as a physical reservoir devices is applied, for MNIST digit classification with 82.26% accuracy and voice classification for digit 2 for six different people with 82 % accuracy.
Gisya Abdi+7 more
wiley +1 more source
CirclizePlus: using ggplot2 feature to write readable R code for circular visualization. [PDF]
Zhang Z, Cao T, Huang Y, Xia Y.
europepmc +1 more source
All Organic Fully Integrated Neuromorphic Crossbar Array
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh+2 more
wiley +1 more source
Long Short-Term Memory-Model Predictive Control Speed Prediction-Based Double Deep Q-Network Energy Management for Hybrid Electric Vehicle to Enhanced Fuel Economy. [PDF]
Liu H, Wang H, Yu M, Wang Y, Luo Y.
europepmc +1 more source
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang+8 more
wiley +1 more source
Low-Power Memristor for Neuromorphic Computing: From Materials to Applications. [PDF]
Xia Z+5 more
europepmc +1 more source
On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez+14 more
wiley +1 more source