Results 121 to 130 of about 677,578 (177)

Generalizing from qualitative data: a case example using critical realist thematic analysis and mechanism mapping to evaluate a community health worker-led screening program in India. [PDF]

Implement Sci
Broderick K, Vaidyanathan A, Ponticiello M, Hooda M, Kulkarni V, Chalem A, Chebrolu P, Onawale A, Baumann A, Mathad J, Sundararajan R.   +10 more
europepmc   +1 more source

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

Advanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio, Rikhard Ranta, Sayani Majumdar   +2 more
wiley   +1 more source

Participatory logic model for a precision child and youth mental health start-up: scoping review, case study, and lessons learned. [PDF]

Front Health Serv
Pajer K, Honeywell C, Howley H, Sheridan N, Affleck W, Terekhov I, Radhakrishnan D.   +6 more
europepmc   +1 more source

Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

Advanced Electronic Materials, EarlyView.
The first Ge n‐channel FeFET memory devices have been demonstrated. By employing an Al2O3/AlN interfacial layer combined with low thermal budget microwaving annealing, a desirable memory window as well as triple‐level cell storage capability with good reliability have been achieved.
Sheng‐Yen Zheng, Wei‐Ning Kao, Yu‐Hsing Chen, Yung‐Hsien Wu   +3 more
wiley   +1 more source

Thermodynamics of Intrinsic Reaction Coordinate (IRC) Chemical Reaction Pathways. [PDF]

Entropy (Basel)
Weinhold F.
europepmc   +1 more source

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Advanced Electronic Materials, EarlyView.
The defects in the charge‐trapping layer are believed to be responsible for endurance degradation in organic transistor nonvolatile memory (ONVM). The ONVM employing thermally treated n‐type semiconductor as the charge‐storage layer can maintain prolonged stable endurance for up to 104 cycles through annealing the charge‐trapping layer, paving the way ...
Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu   +8 more
wiley   +1 more source

An operating system for executing applications on quantum network nodes. [PDF]

Nature
Delle Donne C, Iuliano M, van der Vecht B, Ferreira GM, Jirovská H, van der Steenhoven TJW, Dahlberg A, Skrzypczyk M, Fioretto D, Teller M, Filippov P, Montblanch AR, Fischer J, van Ommen HB, Demetriou N, Leichtle D, Music L, Ollivier H, Te Raa I, Kozlowski W, Taminiau TH, Pawełczak P, Northup TE, Hanson R, Wehner S.   +24 more
europepmc   +1 more source

Advances of Carbon Nanotube Based Flexible Amplifiers for Skin‐Mounted Physiological Signal Monitoring

Advanced Electronic Materials, EarlyView.
Flexible carbon nanotube thin‐film transistors (CNT TFTs) amplifiers are reviewed. It covers fabrication strategies on flexible substrate, including the selection of flexible substrate, device innovation, realization of complementary metal‐oxide‐semiconductor (CMOS) technology.
Haitao Zhang, Yulong Yuan, Jian Hu, Li Xiang   +3 more
wiley   +1 more source

More than a chatbot: a practical framework to harness artificial intelligence across key components to boost digital therapeutics quality. [PDF]

Front Digit Health
Baumel A.
europepmc   +1 more source

Demonstration of Vertically Stacked ZnO/Te Complementary Field‐Effect Transistor

Advanced Electronic Materials, EarlyView.
This study presents the first experimental demonstration of a vertically stacked complementary field‐effect transistor (CFET) using zinc oxide (ZnO) and tellurium (Te), providing a significant advancement in CFET technology. Furthermore, functional logic gates with a minimal footprint are demonstrated, confirming that vertical integration of CFETs is ...
Kiyung Kim, Minjae Kim, Yongsu Lee, Hae‐Won Lee, Jae Hyeon Jun, Jun‐Hyeok Choi, Seongbeen Yoon, Hyeon‐Jun Hwang, Byoung Hun Lee   +8 more
wiley   +1 more source