Results 161 to 170 of about 1,746,473 (345)

Thickness‐Dependent Skyrmion Evolution in Fe3GeTe2 During Magnetization Reversal

open access: yesAdvanced Functional Materials, EarlyView.
Thickness‐ and field‐dependent magnetic domain behavior in 2D van der Waals Fe3GeTe2 is studied using Lorentz TEM and micromagnetic simulations. A patch‐like domain phase evolves from skyrmions during magnetization reversal, and step edges between thickness regions act as pinning sites.
Jennifer Garland   +9 more
wiley   +1 more source

Bimetallic Nanoreactor Activates cGAS‐STING Pathway via mtDNA Release for Cancer Metalloimmunotherapy

open access: yesAdvanced Functional Materials, EarlyView.
A bimetallic Mn–Ca nanoreactor (MCC) is developed as a non‐nucleotide STING nanoagonist for cancer metalloimmunotherapy. MCC induces Ca2+ overload and hydroxyl radical generation, resulting in mitochondrial damage and mtDNA release. The released mtDNA cooperates with Mn2+ to robustly activate cGAS–STING signaling.
Xin Wang Mo   +7 more
wiley   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek   +8 more
wiley   +1 more source

Attention-based Long Short Term Memory Model for DNA Damage Prediction in Mammalian Cells [PDF]

open access: diamond, 2022
Mohammad A. Alsharaiah   +9 more
openalex   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

open access: yesAdvanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon   +9 more
wiley   +1 more source

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