Application of an improved spherical omnidirectional loudspeaker array model in environmental noise pollution control. [PDF]
Li Y, Li W, Fu M, Wang Z, Li Y.
europepmc +1 more source
PerFluoroAlkyl Substances (PFAS) are responsible of major and persistent environmental pollution worldwide. This work demonstrates an ultra‐sensitive sensor for PFAS based on an organic transistor whose gate is functionalized with a binary self‐assembled monolayer containing a perfluorinated molecule.
Rian Zanotti+8 more
wiley +1 more source
Equalizing the In-Ear Acoustic Response of Piezoelectric MEMS Loudspeakers Through Inverse Transducer Modeling. [PDF]
Massi O, Giampiccolo R, Bernardini A.
europepmc +1 more source
Optimal source distribution for binaural synthesis over loudspeakers [PDF]
Takashi Takeuchi, P.A. Nelson
openalex +1 more source
Understanding Functional Materials at School
This review outlines strategies for effectively teaching nanoscience in schools, focusing on challenges such as scale comprehension and curriculum integration. Emphasizing inquiry‐based learning and chemistry core concepts, it showcases hands‐on activities, digital tools, and interdisciplinary approaches.
Johannes Claußnitzer, Jürgen Paul
wiley +1 more source
A polymer-based MEMS loudspeaker featuring a partially stiffened membrane actuated by a PZT thin film. [PDF]
Liechti R+3 more
europepmc +1 more source
Efficiency of low power audio amplifiers and loudspeakers [PDF]
Steve G Burrow, Grant Duncan
openalex +1 more source
Enthesis injuries are a worldwide healthcare problem. Biomimetic electrospun enthesis fascicle‐inspired scaffolds, with and without nano‐mineralization are developed. Human Mesenchymal Stromal cells (hMSCs) express the most balanced enthesis markers on the non‐mineralized scaffolds.
Alberto Sensini+11 more
wiley +1 more source
Higher Order Visual Location Learning Does Not Explain Multisensory Enhancement of Sound Localization (Reply to Vroomen and Stekelenburg 2021). [PDF]
Bruns P, Dinse HR, Röder B.
europepmc +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang+6 more
wiley +1 more source