Results 261 to 270 of about 11,582,841 (294)
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Europhysics Letters (EPL), 1986
At the nucleation stage of phase transformation, the number of critical nuclei is slowly fluctuating, which should lead to a characteristic, electrically detectable, low-f noise. Observation of this noise, which has a well-defined cut-off would provide an internal kinetic test of classical nucleation models.
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At the nucleation stage of phase transformation, the number of critical nuclei is slowly fluctuating, which should lead to a characteristic, electrically detectable, low-f noise. Observation of this noise, which has a well-defined cut-off would provide an internal kinetic test of classical nucleation models.
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Journal of Applied Physics, 1970
Variance fluctuations in 1/f noise examined with apparatus capable of responding to zero frequency signals are found to have the same magnitude as those in band-limited 1/f noise signals. The distribution of variances in identical sample lengths is skewed to small values in the case of current noise in a carbon resistor and is symmetrical in the case ...
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Variance fluctuations in 1/f noise examined with apparatus capable of responding to zero frequency signals are found to have the same magnitude as those in band-limited 1/f noise signals. The distribution of variances in identical sample lengths is skewed to small values in the case of current noise in a carbon resistor and is symmetrical in the case ...
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Low-frequency noise in downscaled silicon transistors: Trends, theory and practice
Physics Reports, 2022Jamal Deen +2 more
exaly
Low Frequency Noise in Microelectronics
2007Aim of the tutorial is an overview of the low frequency noise in semiconductor devices as bipolar and MOS transistors under a point of view interesting for people working in the field of integrated circuit design and device model card development. The tutorial is organised in three main sections addressing different facets of the low frequency noise in
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Analysis of Phase Noise in Phase/Frequency Detectors
IEEE Transactions on Circuits and Systems I: Regular Papers, 2013Behzad Razavi
exaly
Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
IEEE Transactions on Microwave Theory and Techniques, 1989M W Pospieszalski
exaly