Results 41 to 50 of about 709,336 (244)

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure

Sensors, 2017
This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD.
Hiroki Kamehama, Shoji Kawahito, Sumeet Shrestha, Syunta Nakanishi, Keita Yasutomi, Ayaki Takeda, Takeshi Go Tsuru, Yasuo Arai   +7 more
doaj   +1 more source

Low Noise Balanced Homodyne Detector for Quantum Noise Measurement

IEEE Access, 2022
The research of quantum noise in the interaction of laser and atoms plays a critical role in quantum optical experiments. The measurement of quantum noise is mainly based on the balanced homodyne detection method.
Shubo Lang, Shicheng Zhang, Xiaolin Li, Yueping Niu, Shangqing Gong   +4 more
doaj   +1 more source

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

IEEE Journal of the Electron Devices Society
The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing.
Junjie Li, Johan Bergsten, Arsalan Pourkabirian, Jan Grahn   +3 more
doaj   +1 more source

Flow structure and unsteady characteristics of fountain flow induced by dual impinging jets

Kongqi donglixue xuebao
The flow-field structure and mechanical characteristics of dual impinging jets are critical issues during the takeoff and landing phases of aircraft. However, the unsteady characteristics of the fountain effect induced by dual impinging jets have not yet
Yifan Zhao, Rongping Zhang, Rongping Zhang, Yuxiang Liang, Yuxiang Liang, Jiaxi Zhao, Jiaxi Zhao, Xunnian Wang   +7 more
doaj   +1 more source

Valosin‐containing protein counteracts ATP‐driven dissolution of FUS condensates through its ATPase activity in vitro

FEBS Letters, EarlyView.
Biomolecular condensates formed by fused in sarcoma (FUS) are dissolved by high ATP concentrations yet persist in cells. Using a reconstituted system, we demonstrate that valosin‐containing protein (VCP), an AAA+ ATPase, counteracts ATP‐driven dissolution of FUS condensates through its D2 ATPase activity.
Hitomi Kimura, Shin‐ichi Tate, Kyota Yasuda   +2 more
wiley   +1 more source

Design and Analysis of Low-Power Ultra-Wideband CMOS Variable-Gain LNAs With Sub-2.5 dB NF_min Using Coupled Microstrip-Line Neutralization and AGF-Inductor

IEEE Access
This study reports low power-dissipation (PD) and low noise-figure (NF) ultra-wideband CMOS variable-gain amplifiers (VGAs). VGA1 and VGA2 use coupled microstrip-line (CL) neutralization with an adjustable-gain-flatness inductor and multiple inductive ...
Jin-Fa Chang
doaj   +1 more source

Electron transfer between complexes III and IV in S. cerevisiae mitochondrial membranes

FEBS Letters, EarlyView.
Mitochondrial oxidative phosphorylation in S. cerevisiae mitoplasts is limited by complex IV catalytic capacity, rather than two‐dimensional cytochrome c diffusion. At physiological cytochrome c : supercomplex ratios at salinity equivalent to that of 20 mm monovalent salt, activity is maximized, indicating that this low ionic strength accurately mimics
Ana Paula Lobez, Mikael Oliveberg, Peter Brzezinski   +2 more
wiley   +1 more source

A 35 nV/√Hz Analog Front-End Circuit with Adjustable Bandwidth and Gain in UMC 40 nm CMOS for Biopotential Signal Acquisition

Sensors
This paper presents a 35 nV/√Hz analog front-end (AFE) circuitdesigned in the UMC 40 nm CMOS technology for the acquisition of biopotential signal. The proposed AFE consists of a capacitive-coupled instrumentation amplifier (CCIA) and a combination of a ...
Lu Liu, Bin Wang, Yiren Xu, Xiaokun Lin, Weitao Yang, Yinglong Ding   +5 more
doaj   +1 more source

A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

Sensors, 2020
A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle.
Ken Miyauchi, Kazuya Mori, Toshinori Otaka, Toshiyuki Isozaki, Naoto Yasuda, Alex Tsai, Yusuke Sawai, Hideki Owada, Isao Takayanagi, Junichi Nakamura   +9 more
doaj   +1 more source

High-Power-Efficiency Readout Circuit Employing Average Capacitance-to-Voltage Converter for Micro-Electro-Mechanical System Capacitive Accelerometers

Sensors, 2023
A capacitance-to-voltage converter (CVC) is proposed in this paper and applied to a readout circuit for a micro-electro-mechanical system (MEMS) accelerometer to improve the power efficiency.
Linxi Li, Xinquan Lai, Yuheng Wang, Zhiwen Niu   +3 more
doaj   +1 more source