Results 191 to 200 of about 4,441 (253)

Formation of Light‐Emitting Defects in Ag‐Based Memristors

Advanced Electronic Materials, EarlyView.
How does a memristor begin to emit light‐before it even conducts? This work reveals that nanoscale silver clusters form, diffuse, and aggregate during activation, driving early photoluminescence ahead of current flow. Linking these precursor dynamics to later electroluminescence, it uncovers the origins of light emission and enables precise control of ...
Diana Singh, Maciej Ćwierzona, Régis Parvaud, Sebastian Maćkowski, Alexandre Bouhelier   +4 more
wiley   +1 more source

PdNeuRAM: forming-free, multi-bit Pd/HfO₂ ReRAM for energy-efficient neuromorphic computing. [PDF]

Commun Eng
Hua E, Spyrou T, Ahmadi M, Syed AM, Xun H, Braic L, Wehbe N, van der Veer E, Elatab N, Gebregiorgis A, Gaydadjiev G, Noheda B, Hamdioui S, Ishihara R, Abunahla H.   +14 more
europepmc   +1 more source

Integration of Redox‐Active Polyoxovanadate Clusters into PMMA: Structure, Nanoscale Organization and Multilevel Redox Switching

Advanced Electronic Materials, EarlyView.
Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz, Marco Moors, Tom Scherzer, Olesya Daikos, Jens Bauer, Andrea Prager, Jan Griebel, Yeji Lee, Vineeth Kumar Bandari, Thomas Blaudeck, Oliver G. Schmidt, Kirill Monakhov   +11 more
wiley   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review. [PDF]

Nanoscale Adv
Kang HY, Shin YH, Kim DE, Kwon DW, Jeong JK.   +4 more
europepmc   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Data-In-situ Computing with One-Pixel-Multiple-Memristor Architecture for Neuromorphic Sequential Vision. [PDF]

Nat Commun
Sun Y, Tong P, Shen J, Xu H, Cao R, Liu C, Chen C, Song B, Wang Y, Wang W, Yang Y, Li Q.   +11 more
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

NEOSTI - a neuromorphic electronic-opto spatial-temporal hybrid image sensor. [PDF]

Nat Commun
Liu T, Huang Z, Wang X, Shi W, Chen H, Zhang M.   +5 more
europepmc   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

Advanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg, Andreas W. Erhardt, Adrian Hochgesang, John Mohanraj, Lys Sprenger, Sahar Salehi, Christopher R. McNeill, Mukundan Thelakkat   +7 more
wiley   +1 more source