Results 191 to 200 of about 13,642,405 (235)

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

Advanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa, Wataru Namiki, Daiki Nishioka, Maki Nishimura, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya   +6 more
wiley   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

Advanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff   +9 more
wiley   +1 more source

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CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

IEEE Electron Device Letters, 2023
Tian-Yu Wang, Jialin Meng, Qing-Qing Sun   +2 more
exaly   +2 more sources

An Asynchronous Soft Macro for Ultra-Low Power Communication in Neuromorphic Computing

2022 IEEE 4th International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2022
Asynchronous networks-on-chip (NoCs) playa fundamental role to materialize energy efficiency and scalability of spiking neural network-based neuromorphic systems. An unmistakable trend in this field consists of using bundled-data encoding for NoC design, showing promise in overall cost metrics while incorporating moderate timing constraints.
Bertozzi D., Bhardwaj K., Nowick S. M.
openaire   +3 more sources

Spin-Transfer Torque Magnetic neuron for low power neuromorphic computing

2015 International Joint Conference on Neural Networks (IJCNN), 2015
Neuromorphic computing attempts to emulate the remarkable efficiency of the human brain in vision, perception and cognition related tasks. Nanoscale devices that offer a direct mapping to the underlying neural computations have emerged as a promising candidate for such neuromorphic architectures.
Abhronil Sengupta, Kaushik Roy 0001
openaire   +2 more sources

Ultra-Low power neuromorphic computing with spin-torque devices

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 2013
Emerging spin transfer torque (ST) devices such as lateral spin valves and domain wall magnets may lead to ultra-low-voltage, current-mode, spin-torque switches that can offer attractive computing capabilities, beyond digital switches. This paper reviews our work on ST-based non-Boolean data-processing applications, like neural-networks, which involve ...
Mrigank Sharad, Deliang Fan, Karthik Yogendra, Kaushik Roy   +3 more
openaire   +1 more source

Spintronic devices for ultra-low power neuromorphic computation (Special session paper)

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Emerging spin-transfer torque mechanisms in devices like vertical spin valves, lateral spin valves, domain wall motion based devices, spin-torque oscillators and spin-orbit torque based devices have opened up new possibilities of mimicking various neural and synaptic functionalities by the underlying device physics.
Abhronil Sengupta, Karthik Yogendra, Kaushik Roy 0001   +2 more
openaire   +2 more sources

Spin wave based synapse and neuron for ultra low power neuromorphic computation system

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
In this work, we have proposed that the neural synapses and neurons can be realized by utilizing spin waves (SWs) as information carrier. The SWs is excited by spin torque nano-oscillator (STNO), and detected with several different physical mechanisms: 1) tunneling magnetic-resistance 2) spin pumping and 3) inverse spin hall effect.
Lang Zeng, Deming Zhang, Youguang Zhang, Fanghui Gong, Tianqi Gao, Sa Tu, Haiming Yu, Weisheng Zhao 0001   +7 more
openaire   +2 more sources