Results 271 to 280 of about 13,607,711 (325)
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Ultramicroscopy, 2014
Using low beam energies in a (scanning) transmission electron microscope (S/TEM) has numerous advantages over higher beam energies. We discuss the performance of commonly available electron microscopes when being operated at reduced beam energies.
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Using low beam energies in a (scanning) transmission electron microscope (S/TEM) has numerous advantages over higher beam energies. We discuss the performance of commonly available electron microscopes when being operated at reduced beam energies.
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Advanced Functional Materials
Hard carbon (HC) materials with rich closed pore structures and nano‐scaled soft carbon coating layer have emerged as promising anode in sodium‐ion batteries (SIBs).
Dong Sun +14 more
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Hard carbon (HC) materials with rich closed pore structures and nano‐scaled soft carbon coating layer have emerged as promising anode in sodium‐ion batteries (SIBs).
Dong Sun +14 more
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Voltage Support With PV Inverters in Low-Voltage Distribution Networks: An Overview
IEEE Journal of Emerging and Selected Topics in Power ElectronicsLarge solar photovoltaic (PV) penetration using inverters in low-voltage (LV) distribution networks may pose several challenges, such as reverse power flow and voltage rise situations.
Yonghao Gui +10 more
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IEEE Transactions on Smart Grid, 2019
The rapid growth of residential rooftop photovoltaic (PV) systems may cause significant power quality problems, such as severe voltage fluctuation and unbalance which can restrict further PV integrations to the network.
M. Zeraati, M. Golshan, J. Guerrero
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The rapid growth of residential rooftop photovoltaic (PV) systems may cause significant power quality problems, such as severe voltage fluctuation and unbalance which can restrict further PV integrations to the network.
M. Zeraati, M. Golshan, J. Guerrero
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Voltage control in low voltage systems with controlled low voltage transformer (CLVT)
CIRED 2012 Workshop: Integration of Renewables into the Distribution Grid, 2012The rapidly growing penetration of Germany's distribution grids with all forms of DG causes a high pressure on voltage stability according to several normative guidelines. Beside conventional network reinforcements increasing short-circuit-power, new technical alternatives awake interest.
B. Werther +3 more
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A low-power low-voltage MOSFET-only voltage reference
2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004A low-power low-voltage MOSFET-only voltage reference featuring very good temperature stability and referred to the positive power supply is proposed. It compensates for the temperature dependence of a gate-to-source voltage of an MOS transistor working in the weak inversion region with a proportional-to-absolute-temperature voltage generated by a pair
F. Bedeschi +4 more
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Low Power, Low Voltage, Low Drop-Out On-chip Voltage Regulator
2020Extremely low power, low voltage complete on-chip low drop-out voltage regulator (LDO) is presented. The LDO receives an unregulated supply of 0.5–1 V and regulates it to 0.4 V nominal output utilizing a 0.1 V on-chip reference voltage. A load capacitor of just 1pf is assumed to be present at LDO output. Designed voltage reference and complete LDO were
Gopal Agarwal, Ved Vyas Dwivedi
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A low voltage CMOS low drop-out voltage regulator
SPIE Proceedings, 2009A low voltage implementation of a CMOS Low Drop-Out voltage regulator (LDO) is presented. The requirement of low voltage devices is crucial for portable devices that require extensive computations in a low power environment. The LDO is implemented in 90nm generic CMOS technology. It generates a fixed 0.8V from a 2.5V supply which on discharging goes
Salma Ali Bakr +4 more
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A low-voltage low-power voltage reference based on subthreshold MOSFETs
IEEE Journal of Solid-State Circuits, 2003In this work, a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-/spl mu/m CMOS technology, exhibits an average voltage of about 295 mV ...
GIUSTOLISI, Gianluca +3 more
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Understanding the Low-Voltage Hysteresis of Anionic Redox in Na2Mn3O7
Chemistry of Materials, 2019The large-voltage hysteresis remains one of the biggest barriers to optimizing Li/Na-ion cathodes using lattice anionic redox reaction, despite their very high energy density and relative low cost....
Bohang Song +18 more
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