Results 251 to 260 of about 11,848,296 (296)

A 1-MHz-Modified SEPIC With ZVS Characteristic and Low-Voltage Stress

IEEE Transactions on Industrial Electronics, 2019
A 1-MHz-modified single-ended primary-inductor converter (SEPIC) circuit is presented in this paper as an LED driver for automotive headlights. On the basis of traditional SEPIC, only a diode and two capacitors are added; therefore, the circuit structure is relatively simple and the volume is relatively small.
Yijie Wang 0002, Shanshan Gao 0002, Dianguo Xu 0001   +2 more
openaire   +2 more sources

A Class E Power Amplifier with Low Voltage Stress

2015
A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic.
Hayati, M., Roshani, S.
openaire   +1 more source

Low switching stress DC-DC converter with capability of high voltage gain for low voltage energy sources

EPE Journal, 2017
AbstractA soft-switched integrated boost-forward converter with switched capacitor voltage extension cell for low voltage energy sources is proposed. Extended switched capacitor voltage multiplier circuit is incorporated at the secondary side of the forward type coupled inductor.
Shelas Sathyan, H. M. Suryawanshi, M. S. Ballal, A. B. Shitole   +3 more
openaire   +1 more source

A new zero voltage switching resonant DC-link inverter with low voltage stress

Proceedings IECON '91: 1991 International Conference on Industrial Electronics, Control and Instrumentation, 2002
A novel zero voltage switching (ZVS) voltage source inverter is presented to overcome the main problems of the resonant DC link type inverter with discrete pulse modulation, such as the subharmonic problem and high voltage stress (1.3 approximately 1.8 p.u.).
Y.C. Jung, J.G. Cho, G.H. Cho
openaire   +1 more source

The origin of internal stress in low-voltage sputtered tungsten films

Vacuum, 1975
The internal stress can be of importance in the tungsten metallization process used for the fabrication of large−scale integrated circuits. The present work is an extension of an earlier study on the dependence of the stress in low−voltage triode sputtered tungsten films upon deposition conditions and substrate materials.
R. C. Sun, T. C. Tisone, P. D. Cruzan
openaire   +2 more sources

Single switch converter with high voltage gain and low voltage stress for photovoltaic applications

2017 International Conference on Innovative Mechanisms for Industry Applications (ICIMIA), 2017
This paper presents a novel single-switch converter with high voltage gain and low voltage stress for photovoltaic applications. The proposed converter is composed of coupled-inductor and switched-capacitor techniques to achieve high step-up conversion ratio without adopting extremely high duty ratio or high turns ratio.
N Shalini, C Gayithri, R Dhanalakshmi
openaire   +1 more source

A high-voltage DC-DC converter with low-voltage stress and output current tripler

2006 37th IEEE Power Electronics Specialists Conference, 2006
A high-voltage dc-dc converter with low voltage stress on the switches and output current tripler is presented in this paper. This converter exhibits three distinct features. First, the voltage stress on the switches is only one-third of the input voltage, so that switches of low voltage rating and thus of low on-resistance can be used. This can reduce
Ting-ting Song, Henry S. H. Chung, Adrian Ioinovici   +2 more
openaire   +1 more source

Low voltage hot carrier effects and stress methodology

1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers, 2002
The conventional methodology to predict hot carrier device lifetime is to apply stress at high voltages and then extrapolate to lower operating voltage. In this paper hot carrier stress has been applied with different voltages both above and below the silicon to oxide hot electron barrier of 3 V.
openaire   +1 more source

An Electronic Ballast With High Power Factor and Low Voltage Stress

IEEE Transactions on Industry Applications, 2005
This paper presents a new configuration for an electronic ballast with high power factor for fluorescent lamps. The proposed ballast consists of the integration of a buck-boost converter, used as an input stage to correct the power factor and regulate the voltage on a dc bus, and a resonant half-bridge inverter to drive the lamp.
J.A. Vilela, A.R. Vaz, V.J. Farias, L.C. deFreitas, E.A.A. Coelho, J.B. Vieira   +5 more
openaire   +1 more source

Internal stresses and resistivity of low-voltage sputtered tungsten films

Journal of Applied Physics, 1973
The continuing development of microelectronic circuits toward greater complexity has stimulated interest in new materials and processes compatible with the currently known silicon device technology. Tungsten has been considered as the first-level conductor for a multilevel structure due to its relatively low electrical resistivity, its thermal ...
R.C. Sun, T.C. Tisone, P.D. Cruzan
openaire   +1 more source