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Single-Stage Two-Flyback PFC Converter With Low Voltage Stress on a Switch
IEEE transactions on industrial electronics (1982. Print)The proposed converter consists of two flyback ac–dc/dc–dc modules. Some power stored in a first coupled inductor is directly transferred to a load and the other is stored in two dc-link capacitors.
Jae-Won Yang, H. Do
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Low-voltage THz stimulated emission of stressed p-Ge
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2002We present the spectrum of stimulated THz emission of uniaxially stressed p-Ge resonant-state laser (RSL) measured at low electric fields at which the continuous-wave operation of RSL was observed. The spectral lines observed at low voltages are due to intracenter optical transitions.
I.V. Altukhov +5 more
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Low-Voltage Lasing of p-Ge under Uniaxial Stress
Materials Science Forum, 2002We present the spectrum of stimulated THz emission of uniaxially stressed p-Ge resonant-state laser (RSL) measured at low electric fields at which the continuous-wave operation of RSL was observed. The spectral lines observed at low voltages are due to intracenter optical transitions.
R. Zobl +5 more
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Low voltage hot carrier effects and stress methodology
1995 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers, 2002The conventional methodology to predict hot carrier device lifetime is to apply stress at high voltages and then extrapolate to lower operating voltage. In this paper hot carrier stress has been applied with different voltages both above and below the silicon to oxide hot electron barrier of 3 V.
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Switched-LC Based High Gain Converter With Low Voltage Stress
2021 International Conference on Communication, Control and Information Sciences (ICCISc), 2021High step up dcdc converters with lower device voltage stress and lower component count are required for renewable applications. Here, a higher gain dcdc converter based on the switched LC concept is proposed. This converter has better gain, less conduction losses in the MOSFET, reduced voltage stress, lesser components count and better efficiency as ...
Ayisha Suhana +4 more
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IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
In this paper, by using a modular hybrid structure, a new topology for symmetric multilevel inverters (MLIs) with a small number of semiconductors and low voltage stress across switches is proposed.
Amirhosein Gohari, E. Afjei, H. Torkaman
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In this paper, by using a modular hybrid structure, a new topology for symmetric multilevel inverters (MLIs) with a small number of semiconductors and low voltage stress across switches is proposed.
Amirhosein Gohari, E. Afjei, H. Torkaman
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EPE Journal, 2017
AbstractA soft-switched integrated boost-forward converter with switched capacitor voltage extension cell for low voltage energy sources is proposed. Extended switched capacitor voltage multiplier circuit is incorporated at the secondary side of the forward type coupled inductor.
Shelas Sathyan +3 more
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AbstractA soft-switched integrated boost-forward converter with switched capacitor voltage extension cell for low voltage energy sources is proposed. Extended switched capacitor voltage multiplier circuit is incorporated at the secondary side of the forward type coupled inductor.
Shelas Sathyan +3 more
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An Interleaved High Step-Up DC-DC Converter with Low Voltage-Stress on Semiconductors
IECON 2020 The 46th Annual Conference of the IEEE Industrial Electronics Society, 2020In this paper, an interleaved high voltage-gain DC-DC converter is proposed and analyzed. Low voltage-stress on semiconductors and low input current-ripple are the main features of this converter.
Vafa Marzang +5 more
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Semiconductor Science and Technology, 2007
It has been shown that the low voltage gate current in ultrathin oxide metal?oxide?semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used.
C Petit, D Zander
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It has been shown that the low voltage gate current in ultrathin oxide metal?oxide?semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used.
C Petit, D Zander
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A new zero voltage switching resonant DC-link inverter with low voltage stress
Proceedings IECON '91: 1991 International Conference on Industrial Electronics, Control and Instrumentation, 2002A novel zero voltage switching (ZVS) voltage source inverter is presented to overcome the main problems of the resonant DC link type inverter with discrete pulse modulation, such as the subharmonic problem and high voltage stress (1.3 approximately 1.8 p.u.).
Y.C. Jung, J.G. Cho, G.H. Cho
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