Results 261 to 270 of about 17,007 (304)

Yellow Luminescence Centers of GaN

Japanese Journal of Applied Physics, 2004
The method for measuring Shockley–Read–Hall (SRH) lifetime of yellow centers of GaN was developed. The capture-section ratio (150) of hole to electron is extracted by comparing the experimental and theoretical results. A marked increase in the SRH lifetime (from 0.75 to 7.0 ns) with the increasing in Si doping density (from 1.5×1017 to 8.8×1018 cm ...
Guangyuan Zhao, Seth Hubbard, Dimitris Pavlidis   +2 more
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Luminescence Processes in Bi3+ Centers

1973
Photoluminescence processes in Bi3+ centers are investigated in various host materials such as rare earth oxides, vanadates or gallates and in alkaline earth antimonates, using excitation and fluorescence spectra, thermoluminescence, phosphorescence decay and lifetime measurements, between 4 K and 400 K.
G. Boulon, F. Gaume-Mahn, C. Pedrini, B. Jacquier, J. Janin, D. Curie   +5 more
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Luminescence Centers in Crystals

1976
Investigation of the Spectral-Luminescence Properties of Ruby as Active Laser Medium.- I. Spectral Distribution of Luminescence Quantum Efficiency and Absorption Spectra.- II. Phosphorescence of Ruby. Energy Band Scheme.- III. Color Centers in Ruby.- IV.
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Localized luminescence centers of InGaN

Journal of Crystal Growth, 1998
A study was carried out on the low-temperature photoluminescence (PL) and PL excitation measurements of hexagonal In x Ga 1-x N microcrystals. synthesized by the nitridation of the sulfide in the In concentration range, 2% < x < 6%. The broad PL bands decomposed into the single-peak bands with the commonly observed peaks and some additive peaks.
H Kanie, N Tsukamoto, H Koami, T Kawano, T Totsuka   +4 more
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The boron center: A new luminescent center in ZnS crystals

Journal of Luminescence, 1979
Abstract In ZnS crystals containing B, insensitivity of the emission to high pressure, the structure of the excitation spectra and the observed absence of the photo-excited EPR signals suggest that the luminescence may be due to a localized transition between closely associated B Zn and V Zn .
P. Jaszczyn-Kopec, H.D. Fair, D.S. Downs
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Study of paramagnetic and luminescence centers of microcline feldspar

Applied Radiation and Isotopes, 2005
Microcline feldspar crystal has been analyzed in order to determine the centers suitable for use in ESR and luminescence dating. ESR measurements at RT showed the Fe3+ line, and at 77K the Si-O(-) ..X signal with g=2.0052, 2.0098 and 2.0128. TL glow peak at 157 and 300 degrees C in UV interval were observed and in the VIS range we noted peaks at 150 ...
S H, Tatumi, A, Kinoshita, M E, Fukumoto, L C, Courriol, L R P, Kassab, O, Baffa, C S, Munita   +6 more
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Effect of the center interaction on the luminescence lifetime of the F center

Solid State Communications, 1976
Abstract The presence of α and F ′ centers in a F coloured KCl crystal produces an increase of the lifetime of the luminescence excited with F light. One can exclude that the increase of the luminescence lifetime arises from the contribution of an F ′ excited state.
S. Benci, F. Fermi, M. Manfredi
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UV luminescence of F‐centers in aluminum oxide

physica status solidi (c), 2005
Time-resolved spectra of the luminescence in oxygen-deficient α-Al2O3 crystals were studied using synchrotron radiation. The UV luminescence with hν = 3.26 eV and τ = 1.6 ns was detected in addition to the known slowly relaxing component (hν = 3 eV, τ = 34 ms) of the emission transition of the F-center under excitation near 6 eV. It is observed only at
Surdo, A. I., Kortov, V. S., Pustovarov, V. A., Yakovlev, V. Yu.   +3 more
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Electronic structure and luminescence center of blue luminescent carbon nanocrystals

Chemical Physics Letters, 2009
The electronic structure and the origin of luminescence from blue luminescent carbon nanocrystals (CNC) have been investigated with X-ray absorption near-edge structures (XANES) and X-ray excited optical luminescence (XEOL). XANES shows that nitrogen has been incorporated into the carbon nanocrystals matrix (dominated by sp 2 carbon).
Jigang Zhou, Xingtai Zhou, Ruying Li, Xueliang Sun, Zhifeng Ding, Jeffrey Cutler, Tsun-Kong Sham   +6 more
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Metastable chalcogen-related luminescent centers in silicon

Physical Review B, 1994
Selenium-doped silicon quenched after heat treatment at 800 \ifmmode^\circ\else\textdegree\fi{}C exhibits deep luminescence similar to that previously reported in sulfur-doped silicon. The corresponding Se-related complex gives rise to two deep bound-exciton (BE) photoluminescence (PL) emissions, which at low temperature have no-phonon (NP) lines at ...
, Henry, , Sörman, , Andersson, , Chen, , Monemar, , Janzén   +5 more
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