Results 231 to 240 of about 12,418 (275)

Laser‐Based Sculpturing of Embedded Ultrathin Metal‐Oxide Nanopores for Enhanced Biomolecular Sensing

open access: yesAdvanced Functional Materials, EarlyView.
Controlled laser‐drilling of embedded HfO2 membranes creates three layer nanopores with Gaussian‐shaped cavities sculptured in the supporting layers. These embedded solid‐state nanopores slow DNA translocation by 12‐fold compared to SiNx pores, enabling high‐resolution, label‐free detection of short DNAs, RNAs, and proteins.
Jostine Joby   +4 more
wiley   +1 more source

Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing

open access: yesAdvanced Functional Materials, EarlyView.
In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee   +12 more
wiley   +1 more source

Microplastics from Wearable Bioelectronic Devices: Sources, Risks, and Sustainable Solutions

open access: yesAdvanced Functional Materials, EarlyView.
Bioelectronic devices (e.g., e‐skins) heavily rely on polymers that at the end of their life cycle will generate microplastics. For research, a holistic approach to viewing the full impact of such devices cannot be overlooked. The potential for devices as sources for microplastics is raised, with mitigation strategies surrounding polysaccharide and ...
Conor S. Boland
wiley   +1 more source

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

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