Results 211 to 220 of about 3,098,425 (289)

Gd‐Mediated Spin‐State Modulation of Co Sites Enhances Oxygen Electrocatalysis in Zn‐Air Battery

open access: yesAdvanced Science, EarlyView.
The Gd‐mediated spin‐state modulation strategy was proposed to enhance electrocatalytic performance of Co sites towards oxygen reduction reaction. The Gd incorporation modulates the local electronic structure of Co centers by inducing pronounced spin splitting and orbital‐selective spin polarization, which optimizes the adsorption of oxygen‐containing ...
Yijie Shen   +10 more
wiley   +1 more source

Au Quantum Dots Anchored Y‐MOF Enabling Directional Interfacial Charge Transfer for Synergistic Redox Photocatalysis

open access: yesAdvanced Science, EarlyView.
Metal‑support interaction and directional interfacial charge transfer in Au QDs‐anchored Y‐MOF synergistically greatly boost redox photocatalysis for hydrogen evolution and acetaldehyde removal. ABSTRACT The synergistic photocatalytic production of hydrogen coupled with pollutant degradation offers a transformative pathway toward sustainable energy and
Hui Yang   +9 more
wiley   +1 more source

Recent Advances in Programmable Metasurfaces and Meta‐Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao   +4 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

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