Results 251 to 260 of about 76,397 (300)
Magnetic Key Hole Technique (MKH) for Multi-Sensorics Local Tests of Soft Magnetic Laminations Under Defined Conditions of Induction. [PDF]
Pfützner H +5 more
europepmc +1 more source
Study of Graphene-Based Strain Sensing Output Signals Under External Electromagnetic Interference Conditions. [PDF]
Kang F, Han S, Bi K, He J, Chou X.
europepmc +1 more source
Self-supervised representation learning reveals explainable physiological structure in high-dimensional magnetocardiography. [PDF]
Kranz DD +7 more
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An Integrated Photo-Magnetic Sensor Chip Using Giant Magnetoresistance (GMR) and Light-Dependent Resistor (LDR) Technologies Based on Microfabrication Compatibility. [PDF]
Sun X +6 more
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CMOS magnetic-field sensor system
A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation.
A. Sprotte +4 more
openaire +2 more sources
We present a theoretical study of the spatially averaged in-plane magnetic field on square and rectangular magnetic field sensors from a single magnetic bead, a monolayer of magnetic beads, and a half-space filled with magnetic beads being magnetized by the magnetic self-field due to the applied bias current through the sensor.
Troels Borum Grave Hansen +3 more
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Magnetoelectric Sensor of Magnetic Field
Ferroelectrics, 2002As an alternative to semiconductor sensor and sensor on hermetic contacts we present sensor based on magnetoelectric effect. In researches there are used the magnetoelectric bulk composites containing 95% of yttrium-iron garnet and 5% of lead zirconate titanate (PZT) and multilayer composite material consisting of PZT and Ni 0.5 Zn 0.5 Fe 2 O 4 .
M I Bichurin, V M Petrov, R V Petrov
exaly +2 more sources
IEEE Journal of Solid-State Circuits, 1983
The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.
R.S. Popovic, H.P. Baltes
openaire +2 more sources
The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.
R.S. Popovic, H.P. Baltes
openaire +2 more sources

