Results 211 to 220 of about 124,327 (319)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

A Free N‐Heterocyclic Carbene and Its Metal Complex

Angewandte Chemie, EarlyView.
Free N‐heterocyclic carbenes (NHCs) are directly visualized on ultrathin sodium‐chloride films on gold (NaCl/Au(111)) using scanning tunneling microscopy (STM), atomic force microscopy (AFM), and density functional theory (DFT). Submolecular imaging reveals their structure and frontier orbital.
Ankita Das, Tzu‐Chao Hung, Andreas Rank, Felix Giselbrecht, Jonas Schön, Mowpriya Das, Nikos Doltsinis, Saeed Amirjalayer, Jascha Repp, Frank Glorius   +9 more
wiley   +2 more sources

Bi-sigmoid spike-timing dependent plasticity learning rule for magnetic tunnel junction-based SNN. [PDF]

Front Neurosci
Daddinounou S, Vatajelu EI.
europepmc   +1 more source

Extremely Large Non-equilibrium Tunnel Magnetoresistance Ratio in CoRhMnGe Based Magnetic Tunnel Junction by Interface Modification. [PDF]

Front Chem, 2019
Feng Y, Cheng Z, Wang X.
europepmc   +1 more source

Dual‐Mode Oscillations in SiOx‐Based Threshold Switching Devices for Unconventional Probabilistic Computing

Advanced Intelligent Discovery, EarlyView.
To enable versatile unconventional computing, a single SiOx threshold switching device is engineered to exhibit controllable dual‐mode oscillation. By modulating the input voltage, the device selectively provides stable full oscillation for oscillatory neural networks and stochastic probabilistic oscillation for probabilistic bits and true random ...
Hyeonsik Choi, Jihyun Kim, Yonghun Kim, Jiyong Woo   +3 more
wiley   +1 more source

Magnetization Dynamics Modulated by Dzyaloshinskii-Moriya Interaction in the Double-Interface Spin-Transfer Torque Magnetic Tunnel Junction. [PDF]

Nanoscale Res Lett, 2019
Li S, Wang Z, Wang Y, Wang M, Zhao W.
europepmc   +1 more source

Device‐Level Implementation of Reservoir Computing With Memristors

Advanced Intelligent Systems, EarlyView.
Reservoir computing (RC) is an emerging computing scheme that employs a reservoir and a single readout layer, which can be actualized in the nanoscale with memristors. As a comprehensive overview, the principles of RC and the switching mechanisms of memristors are discussed, followed by actual demonstrations of memristor‐based RC and the remaining ...
Sunbeom Park, Hyojung Kim, Ho Won Jang
wiley   +1 more source

Corrigendum: Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons. [PDF]

Sci Rep, 2017
Sengupta A, Panda P, Wijesinghe P, Kim Y, Roy K.   +4 more
europepmc   +1 more source

Feature Disentangling and Combination Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions

Advanced Intelligent Systems, EarlyView.
Spin–orbit torque magnetic tunnel junctions (SOT‐MTJs) enable efficient feature disentangling and integration in image data. A proposed algorithm leverages SOT‐MTJs as true random number generators to disentangle and recombine features in real time, with experimental validation on emoji and facial datasets.
Xiaohan Li, Yingqian Xu, Caihua Wan, Ran Zhang, Meike Hindenberg, Raik Hoffmann, Shiqiang Liu, Tianyi Zhang, Shilong Xiong, Dehao Kong, Jihao Xia, Fangshuo Gao, Zhuyang Nie, Thomas Kämpfe, Guoqiang Yu, Xiufeng Han   +15 more
wiley   +1 more source

Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States. [PDF]

Sci Rep, 2019
Choi JY, Jun H, Ashiba K, Baek JU, Shim TH, Park JG.   +5 more
europepmc   +1 more source