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Magnetic tunnelling junction based FPGA
Proceedings of the 2006 ACM/SIGDA 14th international symposium on Field programmable gate arrays, 2006The aim of this paper is to propose a real time reconfigurable (RTR) micro-FPGA using new non volatile memory. Magnetic tunneling junctions (MTJ) used in Magnetic random access memories (MRAM) are compatible with classical CMOS processes. Moreover remanent property of such a memory could limit configuration time and power consumption required at each ...
Bruchon, Nicolas +3 more
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Transport in magnetically-doped magnetic tunnel junctions
IEEE International Digest of Technical Papers on Magnetics Conference, 2002We report striking transport behavior of magnetic tunnel junctions which are engineered to incorporate localized magnetic impurities inside the tunnel barrier. Such junctions exhibited zero-bias anomalies (giant conductance dip or equivalently, giant resistance peak) in dynamic conductance curves, and striking bias and temperature dependencies of ...
null Seung-Young Bae +1 more
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2008
In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
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In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically.
Reiss, Günter +4 more
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Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions
Science, 2002Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling.
S, Yuasa, T, Nagahama, Y, Suzuki
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MAGNETIC TUNNELING JUNCTIONS WITH A MAGNETIC BARRIER
2023HABIBOGLU ALI +3 more
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Huge tunneling magnetoresistance in magnetic tunnel junction with Heusler alloy Co2MnSi electrodes
Chinese Journal of Chemical Physics, 2021Qunxiang Li
exaly