Results 241 to 250 of about 618,172 (384)

Observation of Topological Chirality Switching Induced Freezing of a Skyrmion Crystal

open access: yesAdvanced Materials, EarlyView.
Using Lorentz Transmission electron microscopy, it is shown that in the insulating van der Waals ferromagnet, CrBr3, a magnetic field can cause Bloch skyrmionic bubbles to spontaneously switch their chirality. As achiral type‐II bubbles are an intermediate state, the bubbles rapidly elongate and shrink when switching, thereby inducing a freezing of the
John Fullerton   +10 more
wiley   +1 more source

Magnetic Field‐Driven Spin State Transformation in Promoting the Catalytic Activity of Doped Single‐Atom for Hydrogen Evolution Reaction

open access: yesAdvanced Materials, EarlyView.
A ferromagnetic RuSAs/Ni2P@Fe3O4 material is designed via a synergistic strategy of single‐atom doping and magnetic field‐driven spin‐state transformation. This strategy introduces new Ru single‐atom active sites for the hydrogen evolution reaction and facilitates the transition of Fe3+ (3d t2g) low‐spin electrons to a high‐spin state (3d eg ...
Chenjing Wang   +9 more
wiley   +1 more source

Magnetic Domain Texture in Fe3O4 Thin Films on SiO2 Nanospheres

open access: yesAdvanced Materials, EarlyView.
Fe3O4 thin films grown on ordered SiO2 nanospheres form curved nanocaps with 3D geometry, inducing magnetic domain texture. X‐ray spectromicroscopy (XMCD‐PEEM), cross‐sectional electron microscopy (STEM), and polarized grazing‐incidence small‐angle neutron scattering (GISANS) reveal how topography modulates magnetization.
Mai Hussein Hamed   +14 more
wiley   +1 more source

Magnetodynamics of short nanoparticle chains. [PDF]

open access: yesSci Rep
Bui TQ   +8 more
europepmc   +1 more source

Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs2

open access: yesAdvanced Materials, EarlyView.
Bulk CdGeAs2, a well‐known nonlinear optical semiconductor, exhibits an exceptionally large room‐temperature nonlinear Hall effect (NLHE), achieving a record‐high nonlinear Hall responsivity of 2.2 × 10−3 m/V. This pronounced NLHE enables broadband frequency mixing up to the megahertz regime, establishing CdGeAs2 as a promising platform for next ...
Seng Huat Lee   +16 more
wiley   +1 more source

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