Results 141 to 150 of about 60,266 (237)

Model‐Aided State Parameter Inversion Identification of Electromagnetic Trip Device for High Voltage Circuit Breakers

High Voltage, EarlyView.
ABSTRACT In this paper, a model‐aided state parameter inversion identification method based on the coil current (CC) of electromagnetic trip device (ETD) is proposed to realise the state parameter inversion online and the quantitative description of defects.
Feiyue Yan, Jiangjun Ruan, Yufei Liu, Yongqing Deng   +3 more
wiley   +1 more source

Crystalline and Microstructural Properties of Cd1−x−yMnxCryTe Semiconductor System (x = 0.33 and 0.05 ≤ y ≤ 0.15)

physica status solidi (a), Volume 223, Issue 3, 6 February 2026.
Cd1−x−yMnxCry (x = 0.33, 0.05 ≤ y ≤ 0.15) quaternary semiconductors were synthesized by direct fusion and characterized by XRD/Rietveld refinement and SEM. All compositions crystallize in the zinc blende structure, exhibiting a systematic lattice contraction with increasing Cr content, evidencing partial Cd substitution, accompanied by marked ...
Manuel A. Villarreal, Agueda M. Turatti, Jorge L. Pimentel, Richard N. Scherdien, Juan C. Terán, Pedro Silva, Marco A. R. Martinez, John C. Mantilla   +7 more
wiley   +1 more source

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda, Jorge Cardenas‐Gamboa, Ding Pei, François Bertran, Leila Noohinejad, Snehashish Chatterjee, Changjiang Yi, Iñigo Robredo, Horst Borrmann, Maia G. Vergniory, Chandra Shekhar, Claudia Felser   +11 more
wiley   +1 more source

A New Family of Ternary Intermetallic Compounds with Dualistic Atomic Ordering – The ZIP Phases

Advanced Materials, Volume 38, Issue 8, 6 February 2026.
The ZIP phases are ternary intermetallic compounds with dualistic atomic ordering, i.e., they exhibit one face‐centered cubic (fcc; space group Fd3¯$\bar 3$m) variant and one hexagonal (space group P63/mmc) variant. The ZIP phases in the Nb‐Si‐Ni system are the Nb3SiNi2 (fcc) and Ni3SiNb2 (hexagonal) ternary IMCs, crystal structure schematics of which ...
Matheus A. Tunes, Sean M. Drewry, Franziska Schmidt, James A. Valdez, Matthew M. Schneider, Caitlin A. Kohnert, Tarik A. Saleh, Saryu Fensin, Stuart A. Maloy, Cláudio G. Schön, Sylvain Dubois, Omri Tabo, Anna Eyal, Amit Keren, Asaf Pesach, Ganesh K. Nayak, Stavros‐Richard G. Christopoulos, Marco Molinari, Marcus Hans, Nick Goossens, Shuigen Huang, Jochen M. Schneider, Per O. Å. Persson, Jozef Vleugels, Konstantina Lambrinou   +24 more
wiley   +1 more source

Néel Tensor Torque in Polycrystalline Antiferromagnets

Advanced Materials, Volume 38, Issue 9, 12 February 2026.
This work introduces a Néel tensor torque based on a rank‐two symmetric tensor capturing spin correlations in a polycrystalline antiferromagnet. It shows the Néel tensor can be shaped and reshaped through the spin‐orbit torque (SOT) technique, enabling field‐free SOT switching with a specific polarity of the adjacent ferromagnet. This discovery opens a
Chao‐Yao Yang, Sheng‐Huai Chen, Chih‐Hsiang Tseng, Hsiu‐Hau Lin, Chih‐Huang Lai   +4 more
wiley   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

Unconventional hysteresis due to time-reversal symmetry breaking superconductivity in RbV₃Sb₅. [PDF]

Nat Commun
Wang S, Feng X, Fang JZ, Peng JP, Sun ZT, Yang JJ, Xiong L, Liu J, Zhao JJ, Kang N, Wu XS, Zhang Z, Fu X, Law KT, Lin BC, Yu D.   +15 more
europepmc   +1 more source

Intercalation‐Induced Phase Transitions in Ferroelectric α‐In2Se3

Advanced Science, Volume 13, Issue 9, 13 February 2026.
Using the electrolyte gating technique, the van der Waals ferroelectric semiconductor α‐In2Se3 undergoes a series of transitions from a ferroelectric semiconductor to a dirty metal and finally to a metal, accompanied by a structural transformation. Concurrently, the ferroelectric hysteresis window progressively narrows and eventually disappears with ...
Xin He, Zhihao Gong, Tao Wang, Baoyu Wang, Chen Liu, Ding Wang, Yinchang Ma, Pu Feng, Chenhui Zhang, Weijin Hu, Kai Liu, Hua Wang, Xixiang Zhang   +12 more
wiley   +1 more source

Transport evidence of current-induced nematic Dirac valleys in a parity-time-symmetric antiferromagnet. [PDF]

Nat Commun
Sakai H, Miyamoto Y, Kimata M, Watanabe H, Yanase Y, Ochi M, Kondo M, Murakawa H, Hanasaki N.   +8 more
europepmc   +1 more source

Extreme Transverse Magnetoresistance in TiZn16

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Extreme magnetoresistance is observed in TiZn16, despite its metallic nature and a highly complex electronic structure with multiple electron and hole Fermi surfaces. High‐magnetic‐field measurements further revealed the presence of a cylindrical open orbit, which may help resolve the origin of the extreme magnetoresistance.
Aaron Chan, Guoxin Zheng, Dechen Zhang, Yuan Zhu, Kaila Jenkins, Kuan‐Wen Chen, Haozhe Wang, Weiwei Xie, Brianna Billingsley, Tai Kong, Na Hyun Jo, Lu Li   +11 more
wiley   +1 more source