Results 11 to 20 of about 52,860 (159)

Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field‐Free Spin–Orbit‐Torque Switching [PDF]

open access: yesAdvances in Materials, 2023
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet ...
Thow Min Jerald Cham   +9 more
semanticscholar   +1 more source

Field-Free Spin-Orbit Torque Switching Enabled by the Interlayer Dzyaloshinskii-Moriya Interaction. [PDF]

open access: yesNano letters (Print), 2022
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory (SOT-MRAM).
W. He   +14 more
semanticscholar   +1 more source

Free-Spin Dominated Magnetocaloric Effect in Dense Gd3+ Double Perovskites [PDF]

open access: yesChemistry of Materials, 2022
Frustrated lanthanide oxides with dense magnetic lattices are of fundamental interest for their potential in cryogenic refrigeration due to a large ground state entropy and suppressed ordering temperatures but can often be limited by short-range ...
Eliseanne Koskelo   +4 more
semanticscholar   +1 more source

Field-free spin–orbit torque switching of an antiferromagnet with perpendicular Néel vector [PDF]

open access: yesJournal of Applied Physics, 2022
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory.
Zhen Xu   +7 more
semanticscholar   +1 more source

Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface

open access: yesNature Communications, 2023
Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from ...
Mengxi Wang   +15 more
semanticscholar   +1 more source

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient [PDF]

open access: yesNature Communications, 2021
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for ...
Zhenyi Zheng   +17 more
semanticscholar   +1 more source

An area law for 2d frustration-free spin systems [PDF]

open access: yesSymposium on the Theory of Computing, 2021
We prove that the entanglement entropy of the ground state of a locally gapped frustration-free 2D lattice spin system satisfies an area law with respect to a vertical bipartition of the lattice into left and right regions.
Anurag Anshu, I. Arad, David Gosset
semanticscholar   +1 more source

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

open access: yesNature Communications, 2023
Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption.
F. Xue   +12 more
semanticscholar   +1 more source

Perspectives on field-free spin–orbit torque devices for memory and computing applications

open access: yesJournal of Applied Physics, 2023
The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing systems with improved performance, energy ...
V. Lopez-Dominguez   +2 more
semanticscholar   +1 more source

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