Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field‐Free Spin–Orbit‐Torque Switching [PDF]
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet ...
Thow Min Jerald Cham+9 more
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Field-Free Spin-Orbit Torque Switching Enabled by the Interlayer Dzyaloshinskii-Moriya Interaction. [PDF]
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory (SOT-MRAM).
W. He+14 more
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Free-Spin Dominated Magnetocaloric Effect in Dense Gd3+ Double Perovskites [PDF]
Frustrated lanthanide oxides with dense magnetic lattices are of fundamental interest for their potential in cryogenic refrigeration due to a large ground state entropy and suppressed ordering temperatures but can often be limited by short-range ...
Eliseanne Koskelo+4 more
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Field-free spin–orbit torque switching of an antiferromagnet with perpendicular Néel vector [PDF]
The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory.
Zhen Xu+7 more
semanticscholar +1 more source
Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from ...
Mengxi Wang+15 more
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Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient [PDF]
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for ...
Zhenyi Zheng+17 more
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An area law for 2d frustration-free spin systems [PDF]
We prove that the entanglement entropy of the ground state of a locally gapped frustration-free 2D lattice spin system satisfies an area law with respect to a vertical bipartition of the lattice into left and right regions.
Anurag Anshu, I. Arad, David Gosset
semanticscholar +1 more source
Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption.
F. Xue+12 more
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Perspectives on field-free spin–orbit torque devices for memory and computing applications
The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing systems with improved performance, energy ...
V. Lopez-Dominguez+2 more
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The effect of an edge roller in mandrel-free spinning [PDF]
Jawale, Kishore, Loukaides, Evripides
openaire +1 more source