Mechanical collapse as primary degradation mode in mandrel-free 18650 Li-ion cells operated at 0 °C
Journal of Power Sources, 2019 Low temperature charging of Li-ion batteries threatens undesired deposition of lithium dendrites which are often blamed for catastrophic, thermal runaway failures.
R. Carter +3 more
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Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current [PDF]
Nano letters (Print), 2023 Current-induced spin–orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications.
V. Kateel +12 more
semanticscholar +1 more source
Field-Free Spin-Orbit Torque Switching Enabled by the Interlayer Dzyaloshinskii-Moriya Interaction. [PDF]
Nano letters (Print), 2022 Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory (SOT-MRAM).
Wenqing He +14 more
semanticscholar +1 more source
Free-Spin Dominated Magnetocaloric Effect in Dense Gd3+ Double Perovskites [PDF]
Chemistry of Materials, 2022 Frustrated lanthanide oxides with dense magnetic lattices are of fundamental interest for their potential in cryogenic refrigeration due to a large ground state entropy and suppressed ordering temperatures but can often be limited by short-range ...
Eliseanne Koskelo +4 more
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Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient [PDF]
Nature Communications, 2021 Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for ...
Zhenyi Zheng +17 more
semanticscholar +1 more source
Nature Communications, 2023 Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from ...
Mengxi Wang +15 more
semanticscholar +1 more source
Field-free spin–orbit torque switching of an antiferromagnet with perpendicular Néel vector [PDF]
Journal of Applied Physics, 2022 The field-free spin-orbit torque induced 180{\deg} reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory.
Zhen Xu +7 more
semanticscholar +1 more source
An area law for 2d frustration-free spin systems [PDF]
Symposium on the Theory of Computing, 2021 We prove that the entanglement entropy of the ground state of a locally gapped frustration-free 2D lattice spin system satisfies an area law with respect to a vertical bipartition of the lattice into left and right regions.
Anurag Anshu, I. Arad, David Gosset
semanticscholar +1 more source
Nature Communications, 2023 Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption.
F. Xue +12 more
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Perspectives on field-free spin–orbit torque devices for memory and computing applications
Journal of Applied Physics, 2023 The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing systems with improved performance, energy ...
V. Lopez-Dominguez +2 more
semanticscholar +1 more source