Results 41 to 50 of about 1,525 (229)

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Many-valued logic: beyond algebraic semantics [PDF]

open access: yesSoft Computing, 2012
The last three decades have witnessed major advances in many-valued logic and related fields. The theory of Łukasiewicz logic and Chang’s MV-algebras has flourished, establishing profound connections with other fields of mathematics; Petr Hajek’s framework for mathematical fuzzy logic has met with remarkable success, bringing into focus the central ...
S. Aguzzoli, B. Gerla, V. Marra
openaire   +1 more source

Electroactive Liquid Crystal Elastomers as Soft Actuators

open access: yesAdvanced Functional Materials, EarlyView.
Electroactive liquid crystal elastomers (eLCEs) can be actuated via electromechanical, electrochemical, or electrothermal effects. a) Electromechanical effects include Maxwell stress, electrostriction, and the electroclinic effect. b) Electrochemical effects arise from electrode redox reactions.
Yakui Deng, Min‐Hui Li
wiley   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

Development of interval-valued fuzzy GRA with SERVPERF based on subjective and objective weights for evaluation of airline service quality: A case study of Korea low-cost carriers.

open access: yesPLoS ONE, 2019
As the airline industry has become ever-more competitive and profitability more tenuous, airline service quality management has grown more important to airlines. Although many studies have focused on the evaluation of airline service quality, some common
Sanghoon Lee, Daekook Kang
doaj   +1 more source

Observation of Relativistic Domain Wall Motion in Amorphous Ferrimagnets

open access: yesAdvanced Functional Materials, EarlyView.
Domain walls in ferrimagnets and antiferromagnets move as relativistic sine‐Gordon solitons, with the spin‐wave velocity setting their speed limit. Such relativistic domain‐wall motion is demonstrated in amorphous GdFeCo near angular momentum compensation, where current‐driven walls reach 90% of the 2 kms−1 spin‐wave speed, enabling ultrafast, device ...
Pietro Diona   +3 more
wiley   +1 more source

True Random Number Generator for Robust Data Security via Intrinsic Stochasticity in a 2D hBN Threshold Switching Memristor

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate true random number generator (TRNG) circuits based on a 2D hBN threshold switching memristor integrated with passive components. Leveraging its intrinsic stochastic behavior, the spike generator produces output fluctuations directly converted into random bits via a comparator.
Yooyeon Jo   +5 more
wiley   +1 more source

Auxeticity‐by‐Assembly: Interlocking Modular Auxetic Metamaterials with Selectively Activatable AgNW–Graphene Oxide‐EGaIn Composite Interconnects for Scalable Freeform Photovoltaic Modules

open access: yesAdvanced Functional Materials, EarlyView.
Auxeticity‑by‑Assembly converts freeform photovoltaics from cut‑defined layouts to assembly‑defined systems. Standardized interlocking units generate negative‑Poisson‑ratio, reconfigurable architectures, while hinge regions are wired by selectively activatable AgNW–GO@EGaIn composite interconnects and a folding‑enabled interconnector layer. A decimeter‑
Seok Joon Hwang   +15 more
wiley   +1 more source

Home - About - Disclaimer - Privacy