Results 151 to 160 of about 1,198,151 (259)

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez   +10 more
wiley   +1 more source

The S32 amino acid deletion in the GP5 protein modulates the infectivity of porcine reproductive and respiratory syndrome virus. [PDF]

open access: yesVirulence
Zhou X   +16 more
europepmc   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels   +4 more
wiley   +1 more source

Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures

open access: yesAdvanced Electronic Materials, EarlyView.
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak   +8 more
wiley   +1 more source

Conférence de M. Marc Kalinowski

open access: yes, 1994
Kalinowski Marc. Conférence de M. Marc Kalinowski. In: École pratique des hautes études, Section des sciences religieuses. Annuaire. Tome 103, 1994-1995. 1994. pp.
Kalinowski, Marc
core  

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

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