Results 201 to 210 of about 535,838 (313)

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

open access: yesAdvanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek   +12 more
wiley   +1 more source

In Situ Magnetic Ordering and Microfabrication of Liquid Crystal Networks with Discretized Alignment

open access: yesAdvanced Functional Materials, EarlyView.
Miniaturizing liquid crystal network actuators typically demands costly laser writing or digital light processing. A low‐cost photolithography platform couples rotating photomasks with a Halbach magnetic array to discretize in‐plane molecular alignment down to 50 µm, producing programmable, light‐responsive grippers, checkerboards, and origami‐inspired
Matthew Gene Scarfo   +3 more
wiley   +1 more source

Variable Masking for Climate Emulation in ACE [PDF]

open access: green
Alexey Yermakov   +4 more
openalex   +1 more source

Forward‐Biased Perovskite Photodiodes for In‐Sensor Optical Change Sensing

open access: yesAdvanced Functional Materials, EarlyView.
A forward‐biased perovskite photodiode is introduced as an in‐sensor analog preprocessing unit that uses current balancing between photocurrent and injection current to generate optical changes relative to programmable optical reference levels. The device directly converts reference‐relative optical changes into bipolar current signals, enabling sensor‐
Eungseon Yeon   +14 more
wiley   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee   +21 more
wiley   +1 more source

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